Datasheet CBRHDSH1-100 (Central Semiconductor)
| Fabricante | Central Semiconductor |
| Descripción | SURFACE MOUNT HIGH DENSITY 1 AMP SILICON SCHOTTKY BRIDGE RECTIFIER |
| Páginas / Página | 4 / 1 — CBRHDSH1-100. SURFACE MOUNT. www.centra lsemi.com. HIGH DENSITY. 1 AMP … |
| Formato / tamaño de archivo | PDF / 847 Kb |
| Idioma del documento | Inglés |
CBRHDSH1-100. SURFACE MOUNT. www.centra lsemi.com. HIGH DENSITY. 1 AMP SILICON. DESCRIPTION:. SCHOTTKY BRIDGE RECTIFIER
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CBRHDSH1-100 SURFACE MOUNT www.centra lsemi.com HIGH DENSITY 1 AMP SILICON DESCRIPTION: SCHOTTKY BRIDGE RECTIFIER
The CENTRAL SEMICONDUCTOR CBRHDSH1-100 is a full wave bridge rectifier in a durable epoxy surface mount molded case, designed for low voltage full wave rectification applications. The molding compound used in this device has UL flammability classification 94V-O.
MARKING CODE: CSH110 FEATURES: •
Low Leakage Current (40nA TYP @ VRRM)
•
Low Forward Voltage Drop Schottky Diodes
HD DIP CASE •
High 1.0A Current Rating
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 100 V DC Blocking Voltage VR 100 V RMS Reverse Voltage VR(RMS) 71 V Average Forward Current IO 1.0 A Peak Forward Surge Current IFSM 20 A Power Dissipation PD 1.2 W Operating Junction Temperature TJ -50 to +125 °C Storage Temperature Tstg -55 to +150 °C Thermal Resistance ΘJA 85 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
IR VR=100V 0.04 10 µA IR VR=100V, TA=50°C 1.0 mA IR VR=100V, TA=100°C 20 mA BVR IR=150µA 100 V VF IF=500mA 615 700 mV VF IF=1.0A 690 750 mV CJ VR=4.0V, f=1.0MHz 230 pF R7 (19-August 2020)
The CENTRAL SEMICONDUCTOR CBRHDSH1-100 is a full wave bridge rectifier in a durable epoxy surface mount molded case, designed for low voltage full wave rectification applications. The molding compound used in this device has UL flammability classification 94V-O.
MARKING CODE: CSH110 FEATURES: •
Low Leakage Current (40nA TYP @ VRRM)
•
Low Forward Voltage Drop Schottky Diodes
HD DIP CASE •
High 1.0A Current Rating
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 100 V DC Blocking Voltage VR 100 V RMS Reverse Voltage VR(RMS) 71 V Average Forward Current IO 1.0 A Peak Forward Surge Current IFSM 20 A Power Dissipation PD 1.2 W Operating Junction Temperature TJ -50 to +125 °C Storage Temperature Tstg -55 to +150 °C Thermal Resistance ΘJA 85 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
IR VR=100V 0.04 10 µA IR VR=100V, TA=50°C 1.0 mA IR VR=100V, TA=100°C 20 mA BVR IR=150µA 100 V VF IF=500mA 615 700 mV VF IF=1.0A 690 750 mV CJ VR=4.0V, f=1.0MHz 230 pF R7 (19-August 2020)