Datasheet SI2308DS (Vishay)
| Fabricante | Vishay |
| Descripción | N-Channel 60-V (D-S) MOSFET |
| Páginas / Página | 5 / 1 — Si2308DS. N-Channel 60-V (D-S) MOSFET. FEATURES. PRODUCT SUMMARY. … |
| Formato / tamaño de archivo | PDF / 84 Kb |
| Idioma del documento | Inglés |
Si2308DS. N-Channel 60-V (D-S) MOSFET. FEATURES. PRODUCT SUMMARY. Halogen-free According to IEC 61249-2-21. VDS (V). RDS(on) (
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Si2308DS
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (
Ω
) ID (A) Available
0.16 at VGS = 10 V 2.0 60 • TrenchFET® Power MOSFET 0.22 at VGS = 4.5 V 1.7 • 100 % Rg Tested
TO-236
(SOT-23) G 1 3 D S 2 Top View Si2308DS (A8)* * Marking Code
Ordering Information:
Si2308DS-T1 Si2308DS-T1-E3 (Lead (Pb)-free) Si2308DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 20 TA = 25 °C 2.0 Continuous Drain Current (T I J = 150 °C)a D TA = 70 °C 1.6 A Pulsed Drain Currentb IDM 10 Continuous Source Current (Diode Conduction)a IS 1.0 TA = 25 °C 1.25 Maximum Power Dissipationa PD W TA = 70 °C 0.80 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Unit
Maximum Junction-to-Ambienta 100 RthJA °C/W Maximum Junction-to-Ambientc 166 Notes: a. Surface Mounted on FR4 board, t ≤ 5 s. b. Pulse width limited by maximum junction temperature. c. Surface Mounted on FR4 board. For SPICE model information via the Worldwide Web: www.vishay.com/www/product/spice.htm * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 70797 www.vishay.com S09-0133-Rev. D, 02-Feb-09 1
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (
Ω
) ID (A) Available
0.16 at VGS = 10 V 2.0 60 • TrenchFET® Power MOSFET 0.22 at VGS = 4.5 V 1.7 • 100 % Rg Tested
TO-236
(SOT-23) G 1 3 D S 2 Top View Si2308DS (A8)* * Marking Code
Ordering Information:
Si2308DS-T1 Si2308DS-T1-E3 (Lead (Pb)-free) Si2308DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 20 TA = 25 °C 2.0 Continuous Drain Current (T I J = 150 °C)a D TA = 70 °C 1.6 A Pulsed Drain Currentb IDM 10 Continuous Source Current (Diode Conduction)a IS 1.0 TA = 25 °C 1.25 Maximum Power Dissipationa PD W TA = 70 °C 0.80 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Unit
Maximum Junction-to-Ambienta 100 RthJA °C/W Maximum Junction-to-Ambientc 166 Notes: a. Surface Mounted on FR4 board, t ≤ 5 s. b. Pulse width limited by maximum junction temperature. c. Surface Mounted on FR4 board. For SPICE model information via the Worldwide Web: www.vishay.com/www/product/spice.htm * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 70797 www.vishay.com S09-0133-Rev. D, 02-Feb-09 1