Datasheet MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G (ON Semiconductor)
| Fabricante | ON Semiconductor |
| Descripción | 30 VOLTSSILICON HOT−CARRIER DETECTOR AND SWITCHING DIODES |
| Páginas / Página | 6 / 1 — www.onsemi.com. Schottky Barrier Diodes. 30 VOLTS. SILICON HOT−CARRIER. … |
| Revisión | 9 |
| Formato / tamaño de archivo | PDF / 214 Kb |
| Idioma del documento | Inglés |
www.onsemi.com. Schottky Barrier Diodes. 30 VOLTS. SILICON HOT−CARRIER. DETECTOR AND SWITCHING. DIODES. Features. TO−92 2−Lead
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link to page 2 MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G Silicon Hot-Carrier Diodes
www.onsemi.com Schottky Barrier Diodes 30 VOLTS
These devices are designed primarily for high−efficiency UHF and
SILICON HOT−CARRIER
VHF detector applications. They are readily adaptable to many other
DETECTOR AND SWITCHING
fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low−cost, high−volume consumer
DIODES
and industrial/commercial requirements. They are also available in a Surface Mount package.
Features
• Extremely Low Minority Carrier Lifetime − 15 ps (Typ) • Very Low Capacitance − 1.5 pF (Max) @ VR = 15 V •
TO−92 2−Lead SOT−23 (TO−236)
Low Reverse Leakage − IR = 13 nAdc (Typ) MBD301, MMBD301
CASE 182 CASE 318
• S Prefix for Automotive and Other Applications Requiring Unique
STYLE 1 STYLE 8
Site and Control Change Requirements; AEC−Q101 Qualified and
TO−92 SOT−23
PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 2 1 3 1 Compliant CATHODE ANODE CATHODE ANODE
MARKING DIAGRAMS MAXIMUM RATINGS Rating Symbol Value Unit
MBD Reverse Voltage V 301 R 30 V AYW G 4T M G Forward Current (DC) IF 200 (Max) mA G G Total Device Dissipation P 1 F @ TA = 25°C MW MBD301G 280
TO−92 SOT−23
MMBD301LT1G, MMBD301LT3G, 200 SMMBD301LT3G A = Assembly Location Derate above 25°C mW/°C Y = Year MBD301G 2.8 W = Work Week MMBD301LT1G, MMBD301LT3G, 2.0 4T = Device Code (SOT−23) SMMBD301LT3G M = Date Code* G = Pb−Free Package Operating Junction TJ −55 to °C Temperature Range +125 (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary Storage Temperature Range Tstg −55 to °C depending upon manufacturing location. +150 Stresses exceeding those listed in the Maximum Ratings table may damage the
ORDERING INFORMATION
device. If any of these limits are exceeded, device functionality should not be See detailed ordering and shipping information in the package assumed, damage may occur and reliability may be affected. dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 1994
1
Publication Order Number:
March, 2018 − Rev. 9 MBD301/D
www.onsemi.com Schottky Barrier Diodes 30 VOLTS
These devices are designed primarily for high−efficiency UHF and
SILICON HOT−CARRIER
VHF detector applications. They are readily adaptable to many other
DETECTOR AND SWITCHING
fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low−cost, high−volume consumer
DIODES
and industrial/commercial requirements. They are also available in a Surface Mount package.
Features
• Extremely Low Minority Carrier Lifetime − 15 ps (Typ) • Very Low Capacitance − 1.5 pF (Max) @ VR = 15 V •
TO−92 2−Lead SOT−23 (TO−236)
Low Reverse Leakage − IR = 13 nAdc (Typ) MBD301, MMBD301
CASE 182 CASE 318
• S Prefix for Automotive and Other Applications Requiring Unique
STYLE 1 STYLE 8
Site and Control Change Requirements; AEC−Q101 Qualified and
TO−92 SOT−23
PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 2 1 3 1 Compliant CATHODE ANODE CATHODE ANODE
MARKING DIAGRAMS MAXIMUM RATINGS Rating Symbol Value Unit
MBD Reverse Voltage V 301 R 30 V AYW G 4T M G Forward Current (DC) IF 200 (Max) mA G G Total Device Dissipation P 1 F @ TA = 25°C MW MBD301G 280
TO−92 SOT−23
MMBD301LT1G, MMBD301LT3G, 200 SMMBD301LT3G A = Assembly Location Derate above 25°C mW/°C Y = Year MBD301G 2.8 W = Work Week MMBD301LT1G, MMBD301LT3G, 2.0 4T = Device Code (SOT−23) SMMBD301LT3G M = Date Code* G = Pb−Free Package Operating Junction TJ −55 to °C Temperature Range +125 (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary Storage Temperature Range Tstg −55 to °C depending upon manufacturing location. +150 Stresses exceeding those listed in the Maximum Ratings table may damage the
ORDERING INFORMATION
device. If any of these limits are exceeded, device functionality should not be See detailed ordering and shipping information in the package assumed, damage may occur and reliability may be affected. dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 1994
1
Publication Order Number:
March, 2018 − Rev. 9 MBD301/D