Datasheet Si3430DV (Vishay)
| Fabricante | Vishay |
| Descripción | N-Channel 100 V (D-S) MOSFET |
| Páginas / Página | 10 / 1 — Si3430DV. N-Channel 100 V (D-S) MOSFET. TSOP-6 Single. FEATURES. PRODUCT … |
| Formato / tamaño de archivo | PDF / 239 Kb |
| Idioma del documento | Inglés |
Si3430DV. N-Channel 100 V (D-S) MOSFET. TSOP-6 Single. FEATURES. PRODUCT SUMMARY. ORDERING INFORMATION. ABSOLUTE MAXIMUM RATINGS
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Si3430DV
www.vishay.com Vishay Siliconix
N-Channel 100 V (D-S) MOSFET TSOP-6 Single FEATURES
S • High-efficiency PWM optimized 4 D • 100 % Rg tested 5 D • Material categorization: 6 for definitions of compliance please see www.vishay.com/doc?99912 Available 3 G (1, 2, 5, 6) D 2 D 1 D Top View
PRODUCT SUMMARY
(3) G VDS (V) 100 RDS(on) max. (Ω) at VGS = 10 V 0.170 RDS(on) max. (Ω) at VGS = 6 V 0.185 Qg typ. (nC) 5.5 I (4) S D (A) 2.4 Configuration Single N-Channel MOSFET
ORDERING INFORMATION
Package TSOP-6 Lead (Pb)-free Si3430DV-T1-E3 Lead (Pb)-free and halogen-free Si3430DV-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL 5 s STEADY STATE UNIT
Drain-source voltage VDS 100 100 V Gate-source voltage VGS ± 20 ± 20 TA = 25 °C 2.4 1.8 Continuous drain current (TJ = 175 °C) a ID TA = 85 °C 1.7 1.3 A Pulsed drain current IDM 8 8 Avalanche current IAR 6 6 L = 0.1 mH Repetitive avalanche energy (duty cycle ≤ 1 %) EAR 1.8 1.8 mJ Continuous source current (diode conduction) a IS 1.7 1 A TA = 25 °C 2 1.14 Maximum power dissipation a PD W TA = 85 °C 1 0.59 Operating junction and storage temperature range TJ, Tstg -55 to +150 -55 to +150 °C
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
t ≤ 5 s 45 62.5 Maximum junction-to-ambient a RthJA Steady state 90 110 °C/W Maximum junction-to-foot (drain) Steady state RthJF 25 30
Note
a. Surface mounted on 1" x 1" FR4 board S19-0836-Rev. E, 30-Sep-2019
1
Document Number: 71235 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
N-Channel 100 V (D-S) MOSFET TSOP-6 Single FEATURES
S • High-efficiency PWM optimized 4 D • 100 % Rg tested 5 D • Material categorization: 6 for definitions of compliance please see www.vishay.com/doc?99912 Available 3 G (1, 2, 5, 6) D 2 D 1 D Top View
PRODUCT SUMMARY
(3) G VDS (V) 100 RDS(on) max. (Ω) at VGS = 10 V 0.170 RDS(on) max. (Ω) at VGS = 6 V 0.185 Qg typ. (nC) 5.5 I (4) S D (A) 2.4 Configuration Single N-Channel MOSFET
ORDERING INFORMATION
Package TSOP-6 Lead (Pb)-free Si3430DV-T1-E3 Lead (Pb)-free and halogen-free Si3430DV-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL 5 s STEADY STATE UNIT
Drain-source voltage VDS 100 100 V Gate-source voltage VGS ± 20 ± 20 TA = 25 °C 2.4 1.8 Continuous drain current (TJ = 175 °C) a ID TA = 85 °C 1.7 1.3 A Pulsed drain current IDM 8 8 Avalanche current IAR 6 6 L = 0.1 mH Repetitive avalanche energy (duty cycle ≤ 1 %) EAR 1.8 1.8 mJ Continuous source current (diode conduction) a IS 1.7 1 A TA = 25 °C 2 1.14 Maximum power dissipation a PD W TA = 85 °C 1 0.59 Operating junction and storage temperature range TJ, Tstg -55 to +150 -55 to +150 °C
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
t ≤ 5 s 45 62.5 Maximum junction-to-ambient a RthJA Steady state 90 110 °C/W Maximum junction-to-foot (drain) Steady state RthJF 25 30
Note
a. Surface mounted on 1" x 1" FR4 board S19-0836-Rev. E, 30-Sep-2019
1
Document Number: 71235 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000