Datasheet MPSH81, MMBTH81 (ON Semiconductor) - 3

(continued) Electrical Characteristics
Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 20 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 20 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 3.0 V ICBO Collector Cutoff Current VCB = 10 V, IE = 0 100 nA IEBO Emitter Cutoff Current VEB = 2.0 V, IC = 0 100 nA MPSH81 / MMBTH81 PNP RF Transistor ON CHARACTERISTICS
hFE DC Current Gain IC = 5.0 mA, VCE = 10 V VCE(sat) Collector-Emitter Saturation Voltage IC = 5.0 mA, IB = 0.5 mA 60
0.5 V VBE(on) Base-Emitter On Voltage IC = 5.0 mA, VCE = 10 V 0.9 V SMALL SIGNAL CHARACTERISTICS
fT Current Gain -Bandwidth Product Ccb Collector-Base Capacitance IC = 5.0 mA, VCE = 10 V,
f = 100 MHz
VCB = 10 V, IE = 0, f = 1.0 MHz Cce Collector Emitter Capcitance VCB = 10 V, IB = 0, f = 1.0 MHz 600 MHz
0.85 pF 0.65 pF *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors. 3
Spice Model
PNP(Is=10f Xti=3 Eg=1.11 Vaf=100 Bf=133.8 Ise=1.678p Ne=2.159 Ikf=.1658 Nk=.901 Xtb=1.5 Var=100 Br=1
Isc=9.519n Nc=3.88 Ikr=5.813 Rc=7.838 Cjc=2.81p Mjc=.1615 Vjc=.8282 Fc=.5 Cje=2.695p Mje=.3214 Vje=.7026
Tr=11.32n Tf=97.83p Itf=69.29 Xtf=599u Vtf=10) DC Current Gain vs
Collector Current
h FE -DC CURRENT GAIN 200
V CE = 1.0V 180
T A = 125°C 160
140 T A = 25°C 120
100
80
40 -1 I C = 10 I B -0.5
-0.2 T A = 25°C T A = 125°C -0.1
T A = -55°C -0.02 20
0
-0.1 Collector Saturation Voltage
vs Collector Current -0.05 T A = -55°C 60 V CE(SAT) -COLLECTO R SAT. VOLTAG E (V) Typical Characteristics -1 -10 I C -COLLECTOR CURRENT (mA) -100 -0.01
-0.1 -1
-10
I C -COLLECTO R CURRENT ( mA) -100