Datasheet MTP36N06V (ON Semiconductor) - 2

MTP36N06V
Preferred Device
Power MOSFET 32 Amps, 60 Volts
N−Channel TO−220
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power
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motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are
32 AMPERES
critical and offer additional safety margin against unexpected voltage
60 VOLTS
transients.
RDS(on) = 40 m
Ω • Avalanche Energy Specified • IDSS and VDS(on) Specified at Elevated Temperature
N−Channel
D
MAXIMUM RATINGS
(TC = 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage VDSS 60 Vdc Drain−to−Gate Voltage (R G GS = 1.0 MΩ) VDGR 60 Vdc Gate−to−Source Voltage − Continuous V S GS ± 20 Vdc − Non−repetitive (tp ≤ 10 ms) VGSM ± 25 Vpk Drain Current − Continuous @ 25 °C ID 32 Adc
MARKING DIAGRAM
Drain Current − Continuous @ 100 °C ID 22.6
& PIN ASSIGNMENT
Drain Current − Single Pulse (tp ≤ 10 μs) IDM 112 Apk 4 Total Power Dissipation @ 25 °C P 4 D 90 Watts Drain Derate above 25 °C 0.6 W/°C Operating and Storage Temperature TJ, Tstg −55 to °C Range 175
TO−220AB
Single Pulse Drain−to−Source Avalanche E
CASE 221A
AS 205 mJ Energy − Starting T
STYLE 5
J = 25°C MTP30N06V (VDD = 25 Vdc, VGS = 10 Vdc, Peak LLYWW IL = 32 Apk, L = 0.1 mH, RG = 25 Ω) 1 Thermal Resistance − Junction to Case R 2 θJC 1.67 °C/W 3 1 3 Thermal Resistance − Junction to Ambient RθJA 62.5 Gate Source Maximum Lead Temperature for Soldering TL 260 °C Purposes, 1/8″ from Case for 10 2 seconds Drain MTP30N06V = Device Code LL = Location Code Y = Year WW = Work Week
ORDERING INFORMATION Device Package Shipping
MTP36N06V TO−220AB 50 Units/Rail
Preferred
devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
August, 2006 − Rev. 4 MTP36N06V/D