Datasheet NTD4815NH (ON Semiconductor) - 4
| Fabricante | ON Semiconductor |
| Descripción | Power MOSFET30 V, 35 A, Single N--Channel, DPAK/IPAK |
| Páginas / Página | 9 / 4 — NTD4815NH. ELECTRICAL CHARACTERISTICS. Parameter. Symbol. Test Condition. … |
| Revisión | 3 |
| Formato / tamaño de archivo | PDF / 353 Kb |
| Idioma del documento | Inglés |
NTD4815NH. ELECTRICAL CHARACTERISTICS. Parameter. Symbol. Test Condition. Min. Typ. Max. Unit. SWITCHING CHARACTERISTICS
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NTD4815NH ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS
(Note 4) Turn- On Delay Time td(ON) 6.7 Rise Time tr V 14.7 17.6 GS = 11.5 V, VDS = 15 V, I ns Turn- Off Delay Time t D = 15 A, RG = 3.0 Ω d(OFF) 17.8 18.4 Fall Time tf 1.8 2.3
DRAIN- SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD V T GS = 0 V, J = 25°C 0.98 1.2 I V S = 30 A TJ = 125°C 0.92 Reverse Recovery Time tRR 18.1 Charge Time ta V 11.3 ns GS = 0 V, dIS/dt = 100 A/ms, I Discharge Time t S = 30 A b 6.8 Reverse Recovery Charge QRR 8.2 nC
PACKAGE PARASITIC VALUES
Source Inductance LS 2.49 nH Drain Inductance, DPAK LD 0.0164 Drain Inductance, IPAK LD TA = 25°C 1.88 Gate Inductance LG 3.46 Gate Resistance RG 0.6 Ω 3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures.
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(TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS
(Note 4) Turn- On Delay Time td(ON) 6.7 Rise Time tr V 14.7 17.6 GS = 11.5 V, VDS = 15 V, I ns Turn- Off Delay Time t D = 15 A, RG = 3.0 Ω d(OFF) 17.8 18.4 Fall Time tf 1.8 2.3
DRAIN- SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD V T GS = 0 V, J = 25°C 0.98 1.2 I V S = 30 A TJ = 125°C 0.92 Reverse Recovery Time tRR 18.1 Charge Time ta V 11.3 ns GS = 0 V, dIS/dt = 100 A/ms, I Discharge Time t S = 30 A b 6.8 Reverse Recovery Charge QRR 8.2 nC
PACKAGE PARASITIC VALUES
Source Inductance LS 2.49 nH Drain Inductance, DPAK LD 0.0164 Drain Inductance, IPAK LD TA = 25°C 1.88 Gate Inductance LG 3.46 Gate Resistance RG 0.6 Ω 3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures.
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