Datasheet BC182, BC182A, BC182B (ON Semiconductor) - 3

FabricanteON Semiconductor
DescripciónAmplifier Transistors NPN Silicon
Páginas / Página4 / 3 — BC182, BC182A, BC182B. Figure 1. Normalized DC Current Gain. Figure 1. …
Revisión5
Formato / tamaño de archivoPDF / 56 Kb
Idioma del documentoInglés

BC182, BC182A, BC182B. Figure 1. Normalized DC Current Gain. Figure 1. “Saturation” and “On” Voltages

BC182, BC182A, BC182B Figure 1 Normalized DC Current Gain Figure 1 “Saturation” and “On” Voltages

Línea de modelo para esta hoja de datos

Versión de texto del documento

BC182, BC182A, BC182B
2.0 1.0 V T 1.5 CE = 10 V 0.9 A = 25°C GAIN TA = 25°C 0.8 VBE(sat) @ IC/IB = 10 1.0 0.7 TS) VBE(on) @ VCE = 10 V 0.8 0.6 (VOL 0.6 0.5 TAGE 0.4 0.4 V, VOL 0.3 , NORMALIZED DC CURRENT 0.3 0.2 VCE(sat) @ IC/IB = 10 h FE 0.1 0.2 0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain Figure 1. “Saturation” and “On” Voltages
400 (MHz) 10 300 7.0 200 TA = 25°C (pF) 5.0 Cib 100 VCE = 10 V ANCE 80 TA = 25°C 3.0 ACIT Cob 60 C, CAP 2.0 40 30 20 , CURRENT−GAIN BANDWIDTH PRODUCT 1.0 f T 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 IC, COLLECTOR CURRENT (mAdc) VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Current−Gain — Bandwidth Product Figure 3. Capacitances
170 (OHMS) 160 ANCE 150 VCE = 10 V f = 1.0 kHz 140 TA = 25°C 130 , BASE SPREADING RESIST r b 1200.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mAdc)
Figure 4. Base Spreading Resistance http://onsemi.com 3