Datasheet TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) (ON Semiconductor) - 6

FabricanteON Semiconductor
DescripciónPlastic Medium-Power Complementary Silicon Transistors
Páginas / Página8 / 6 — TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP). NPN. PNP. …
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TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP). NPN. PNP. TIP120, TIP121, TIP122. TIP125, TIP126, TIP127

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) NPN PNP TIP120, TIP121, TIP122 TIP125, TIP126, TIP127

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TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) NPN PNP TIP120, TIP121, TIP122 TIP125, TIP126, TIP127
20,000 20,000 VCE = 4.0 V VCE = 4.0 V 10,000 10,000 7000 5000 5000 GAIN TJ = 150°C GAIN TJ = 150°C 3000 3000 2000 25°C 25°C 2000 , DC CURRENT 1000 -55°C , DC CURRENT 1000 FE FE h h 700 -55°C 500 500 300 300 200 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 9. DC Current Gain
TS) 3.0 TS) 3.0 TJ = 25°C TJ = 25°C I 2.6 C = 2.0 A 4.0 A 6.0 A 2.6 IC = 2.0 A 4.0 A 6.0 A TAGE (VOL TAGE (VOL 2.2 2.2 1.8 1.8 OR-EMITTER VOL OR-EMITTER VOL 1.4 1.4 , COLLECT , COLLECT CE CE V 1.0 V 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)
Figure 10. Collector Saturation Region
3.0 3.0 TJ = 25°C TJ = 25°C 2.5 2.5 TS) TS) 2.0 2.0 TAGE (VOL TAGE (VOL 1.5 VBE(sat) @ IC/IB = 250 1.5 VBE @ VCE = 4.0 V , VOL , VOL V V VBE @ VCE = 4.0 V V 1.0 BE(sat) @ IC/IB = 250 1.0 VCE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.5 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 11. “On” Voltages www.onsemi.com 6