Datasheet TIP120, TIP121, TIP122 (ON Semiconductor) - 3

TIP120 / TIP121 / TIP122 — NPN Epi Typical Performance Characteristics
E
10000
G V
3.5
CE = 4V IC = 250IB
3.0
IN ON VOLTA A G RATI
2.5
NT TU A
1000 2.0
, S CURRE t)[V] V
1.5
BE(sat) (sa , DC CE h FE t), V
1.0
VCE(sat) (sa BEV
100 0.5 0.1 1 10 0.1 1 10 t
IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT
axial Darlington T Figure 1. DC Current Gain Figure 2. Base-Emitter Saturation Voltage and Collector-Emitter Saturation Voltage 1000 10
10 500 0μ f=0.1MHz s μs E 1m s NC 5m NT A DC s RE CIT
1 r
A
ansistor 100
OR CUR ], CAP F [p ib Cob C
0.1
F] TIP120 [p C ], COLLECT ib ob TIP121 C [A I C TIP122
10 0.01 0.1 1 10 100 1 10 100
V V [V], COLLECTOR-EMITTER VOLTAGE CB[V], COLLECTOR-BASE VOLTAGE CE VEB[V], EMITTER-BASE VOLTAGE
Figure 3. Output and Input Capacitance Figure 4. Safe Operating Area vs. Reverse Voltage 80 70 60
TION PA
50
SSI
40
R DI
30
POWE ],
20
[W C P
10 0 0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 5. Power Derating
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