Datasheet BC640-016G (ON Semiconductor) - 2

BC640−016G ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage V(BR)CEO Vdc (IC = −10 mAdc, IB = 0) −80 − − Collector − Base Breakdown Voltage V(BR)CBO Vdc (IC = −100 mAdc, IE = 0) −80 − − Emitter − Base Breakdown Voltage V(BR)EBO −5.0 − − Vdc (IE = −10 mAdc, IC = 0) Collector Cutoff Current ICBO (VCB = −30 Vdc, IE = 0) − − −100 nAdc (VCB = −30 Vdc, IE = 0, TA = 125°C) − − −10 mAdc
ON CHARACTERISTICS
(Note 1) DC Current Gain hFE − (IC = −5.0 mAdc, VCE = −2.0 Vdc) 25 − − (IC = −150 mAdc, VCE = −2.0 Vdc) 100 − 250 (IC = −500 mA, VCE = −2.0 V) 25 − − Collector − Emitter Saturation Voltage VCE(sat) Vdc (IC = −500 mAdc, IB = −50 mAdc) − −0.25 −0.5 Base − Emitter On Voltage VBE(on) Vdc (IC = −500 mAdc, VCE = −2.0 Vdc) − − −1.0
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product fT MHz (IC = −50 mAdc, VCE = −2.0 Vdc, f = 100 MHz) − 150 − Output Capacitance Cob pF (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) − 9.0 − Input Capacitance Cib pF (VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz) − 110 − 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle 2.0%.
ORDERING INFORMATION Device Package Shipping
BC640−016G TO−92 5000 Units / Bulk (Pb−Free)
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