Datasheet PSMNR55-40SSH (Nexperia) - 6
| Fabricante | Nexperia |
| Descripción | N-channel 40 V, 0.55 mOhm, 500 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology |
| Páginas / Página | 14 / 6 — Nexperia. PSMNR55-40SSH. N-channel 40 V, 0.55 mOhm, 500 Amps continuous, … |
| Revisión | 06042021 |
| Formato / tamaño de archivo | PDF / 335 Kb |
| Idioma del documento | Inglés |
Nexperia. PSMNR55-40SSH. N-channel 40 V, 0.55 mOhm, 500 Amps continuous, standard level MOSFET in LFPAK88 using
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Nexperia PSMNR55-40SSH N-channel 40 V, 0.55 mOhm, 500 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology
aaa-029383 aaa-029384 Copper square 25.4 mm x 25.4 mm; 70 μm thick on 70 μm thick copper on FR4 board FR4 board
Fig. 7. PCB layout with minimum footprint for thermal Fig. 6. PCB layout for resistance from junction to resistance from junction to ambient ambient 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics
V(BR)DSS drain-source ID = 250 µA; VGS = 0 V; Tj = 25 °C 40 43 - V breakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C 36 40 - V VGS(th) gate-source threshold ID = 1 mA; VDS=VGS; Tj = 25 °C; Fig. 11; 2.4 3 3.6 V voltage Fig. 12 ID = 1 mA; VDS=VGS; Tj = -55 °C; Fig. 12 - - 4.3 V ID = 1 mA; VDS=VGS; Tj = 175 °C; 1 - - V Fig. 12 ΔVGS(th)/ΔT gate-source threshold 25 °C ≤ Tj ≤ 175 °C - -8.1 - mV/K voltage variation with temperature IDSS drain leakage current VDS = 32 V; VGS = 0 V; Tj = 25 °C - - 2 µA VDS = 32 V; VGS = 0 V; Tj = 175 °C - 202 - µA IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = -10 V; VDS = 0 V; Tj = 25 °C - 2 100 nA RDSon drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C; 0.33 0.47 0.55 mΩ resistance Fig. 13 VGS = 10 V; ID = 25 A; Tj = 105 °C; 0.47 0.68 0.87 mΩ Fig. 14 VGS = 10 V; ID = 25 A; Tj = 125 °C; 0.52 0.75 0.95 mΩ Fig. 14 VGS = 10 V; ID = 25 A; Tj = 175 °C; 0.65 0.93 1.19 mΩ Fig. 14 RG gate resistance f = 1 MHz; Tj = 25 °C 0.37 0.92 2.31 Ω
Dynamic characteristics
QG(tot) total gate charge ID = 25 A; VDS = 32 V; VGS = 10 V; - 190 267 nC Fig. 15; Fig. 16 ID = 0 A; VDS = 0 V; VGS = 10 V - 96 - nC PSMNR55-40SSH All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. Al rights reserved
Product data sheet 6 April 2021 6 / 14
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Legal information Contents
Nexperia PSMNR55-40SSH N-channel 40 V, 0.55 mOhm, 500 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology
aaa-029383 aaa-029384 Copper square 25.4 mm x 25.4 mm; 70 μm thick on 70 μm thick copper on FR4 board FR4 board
Fig. 7. PCB layout with minimum footprint for thermal Fig. 6. PCB layout for resistance from junction to resistance from junction to ambient ambient 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics
V(BR)DSS drain-source ID = 250 µA; VGS = 0 V; Tj = 25 °C 40 43 - V breakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C 36 40 - V VGS(th) gate-source threshold ID = 1 mA; VDS=VGS; Tj = 25 °C; Fig. 11; 2.4 3 3.6 V voltage Fig. 12 ID = 1 mA; VDS=VGS; Tj = -55 °C; Fig. 12 - - 4.3 V ID = 1 mA; VDS=VGS; Tj = 175 °C; 1 - - V Fig. 12 ΔVGS(th)/ΔT gate-source threshold 25 °C ≤ Tj ≤ 175 °C - -8.1 - mV/K voltage variation with temperature IDSS drain leakage current VDS = 32 V; VGS = 0 V; Tj = 25 °C - - 2 µA VDS = 32 V; VGS = 0 V; Tj = 175 °C - 202 - µA IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = -10 V; VDS = 0 V; Tj = 25 °C - 2 100 nA RDSon drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C; 0.33 0.47 0.55 mΩ resistance Fig. 13 VGS = 10 V; ID = 25 A; Tj = 105 °C; 0.47 0.68 0.87 mΩ Fig. 14 VGS = 10 V; ID = 25 A; Tj = 125 °C; 0.52 0.75 0.95 mΩ Fig. 14 VGS = 10 V; ID = 25 A; Tj = 175 °C; 0.65 0.93 1.19 mΩ Fig. 14 RG gate resistance f = 1 MHz; Tj = 25 °C 0.37 0.92 2.31 Ω
Dynamic characteristics
QG(tot) total gate charge ID = 25 A; VDS = 32 V; VGS = 10 V; - 190 267 nC Fig. 15; Fig. 16 ID = 0 A; VDS = 0 V; VGS = 10 V - 96 - nC PSMNR55-40SSH All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. Al rights reserved
Product data sheet 6 April 2021 6 / 14
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Legal information Contents