Datasheet BUK7S0R5-40H (Nexperia) - 5
| Fabricante | Nexperia |
| Descripción | N-channel 40 V, 0.5 mOhm standard level MOSFET in LFPAK88 |
| Páginas / Página | 13 / 5 — Nexperia. BUK7S0R5-40H. N-channel 40 V, 0.5 mOhm standard level MOSFET in … |
| Revisión | 06042021 |
| Formato / tamaño de archivo | PDF / 326 Kb |
| Idioma del documento | Inglés |
Nexperia. BUK7S0R5-40H. N-channel 40 V, 0.5 mOhm standard level MOSFET in LFPAK88
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Nexperia BUK7S0R5-40H N-channel 40 V, 0.5 mOhm standard level MOSFET in LFPAK88
aaa-032614 1 Zt Z ht(j(-m - b) b (K/ K W) W δ δ = = 0 .5 . 10-1 0.02 0. 0 1 0. 0 05 0 tp 10-2 0. 0 02 0 P δ = T sing n l g e e sh s ot o t tp T 10-310-6 10-5 10-4 10-3 10-2 10-1 1 tp (s)
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics
V(BR)DSS drain-source ID = 250 µA; VGS = 0 V; Tj = 25 °C 40 43 - V breakdown voltage ID = 250 µA; VGS = 0 V; Tj = -40 °C - 40.5 - V ID = 250 µA; VGS = 0 V; Tj = -55 °C 36 40 - V VGS(th) gate-source threshold ID = 1 mA; VDS=VGS; Tj = 25 °C; Fig. 9; 2.4 3 3.6 V voltage Fig. 10 ID = 1 mA; VDS=VGS; Tj = -55 °C; Fig. 10 - - 4.3 V ID = 1 mA; VDS=VGS; Tj = 175 °C; 1 - - V Fig. 10 IDSS drain leakage current VDS = 40 V; VGS = 0 V; Tj = 25 °C - 0.2 2.9 µA VDS = 16 V; VGS = 0 V; Tj = 125 °C - 4.6 25 µA VDS = 40 V; VGS = 0 V; Tj = 175 °C - 455 1000 µA IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = -10 V; VDS = 0 V; Tj = 25 °C - 2 100 nA RDSon drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C; 0.33 0.47 0.55 mΩ resistance Fig. 11 VGS = 10 V; ID = 25 A; Tj = 105 °C; 0.47 0.68 0.87 mΩ Fig. 12 VGS = 10 V; ID = 25 A; Tj = 125 °C; 0.52 0.75 0.95 mΩ Fig. 12 VGS = 10 V; ID = 25 A; Tj = 175 °C; 0.65 0.93 1.19 mΩ Fig. 12 RG gate resistance f = 1 MHz; Tj = 25 °C 0.37 0.92 2.31 Ω
Dynamic characteristics
QG(tot) total gate charge ID = 25 A; VDS = 32 V; VGS = 10 V; - 190 267 nC Q Fig. 13; Fig. 14 GS gate-source charge - 51 77 nC QGD gate-drain charge - 32 65 nC BUK7S0R5-40H All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. Al rights reserved
Product data sheet 6 April 2021 5 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Legal information Contents
Nexperia BUK7S0R5-40H N-channel 40 V, 0.5 mOhm standard level MOSFET in LFPAK88
aaa-032614 1 Zt Z ht(j(-m - b) b (K/ K W) W δ δ = = 0 .5 . 10-1 0.02 0. 0 1 0. 0 05 0 tp 10-2 0. 0 02 0 P δ = T sing n l g e e sh s ot o t tp T 10-310-6 10-5 10-4 10-3 10-2 10-1 1 tp (s)
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics
V(BR)DSS drain-source ID = 250 µA; VGS = 0 V; Tj = 25 °C 40 43 - V breakdown voltage ID = 250 µA; VGS = 0 V; Tj = -40 °C - 40.5 - V ID = 250 µA; VGS = 0 V; Tj = -55 °C 36 40 - V VGS(th) gate-source threshold ID = 1 mA; VDS=VGS; Tj = 25 °C; Fig. 9; 2.4 3 3.6 V voltage Fig. 10 ID = 1 mA; VDS=VGS; Tj = -55 °C; Fig. 10 - - 4.3 V ID = 1 mA; VDS=VGS; Tj = 175 °C; 1 - - V Fig. 10 IDSS drain leakage current VDS = 40 V; VGS = 0 V; Tj = 25 °C - 0.2 2.9 µA VDS = 16 V; VGS = 0 V; Tj = 125 °C - 4.6 25 µA VDS = 40 V; VGS = 0 V; Tj = 175 °C - 455 1000 µA IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = -10 V; VDS = 0 V; Tj = 25 °C - 2 100 nA RDSon drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C; 0.33 0.47 0.55 mΩ resistance Fig. 11 VGS = 10 V; ID = 25 A; Tj = 105 °C; 0.47 0.68 0.87 mΩ Fig. 12 VGS = 10 V; ID = 25 A; Tj = 125 °C; 0.52 0.75 0.95 mΩ Fig. 12 VGS = 10 V; ID = 25 A; Tj = 175 °C; 0.65 0.93 1.19 mΩ Fig. 12 RG gate resistance f = 1 MHz; Tj = 25 °C 0.37 0.92 2.31 Ω
Dynamic characteristics
QG(tot) total gate charge ID = 25 A; VDS = 32 V; VGS = 10 V; - 190 267 nC Q Fig. 13; Fig. 14 GS gate-source charge - 51 77 nC QGD gate-drain charge - 32 65 nC BUK7S0R5-40H All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. Al rights reserved
Product data sheet 6 April 2021 5 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Legal information Contents