Datasheet SD101A, SD101B, SD101C (Vishay)
| Fabricante | Vishay |
| Descripción | Small Signal Schottky Diodes |
| Páginas / Página | 4 / 1 — SD101A, SD101B, SD101C. Small Signal Schottky Diodes. FEATURES. DESIGN … |
| Formato / tamaño de archivo | PDF / 78 Kb |
| Idioma del documento | Inglés |
SD101A, SD101B, SD101C. Small Signal Schottky Diodes. FEATURES. DESIGN SUPPORT TOOLS. APPLICATIONS. MECHANICAL DATA. Case:. Weight:
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SD101A, SD101B, SD101C
www.vishay.com Vishay Semiconductors
Small Signal Schottky Diodes FEATURES
• Integrated protection ring against static discharge • Low capacitance • Low leakage current • Low forward voltage drop • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
DESIGN SUPPORT TOOLS
click logo to get started
APPLICATIONS
• HF-detector Models • Protection circuit Available • Diode for low currents with a low supply voltage
MECHANICAL DATA
• Small battery charger
Case:
DO-35 (DO-204AH) • Power supplies
Weight:
approx. 125 mg • DC/DC converter for notebooks
Cathode band color:
black
Packaging codes/options:
TR/10K per 13" reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box
PARTS TABLE CIRCUIT PART TYPE DIFFERENTATION ORDERING CODE TYPE MARKING REMARKS CONFIGURATION
V SD101A-TR or Tape and reel/ SD101A R = 60 V, VF max. 410 mV Single SD101A at IF = 1 mA SD101A-TAP ammopack V SD101B-TR or Tape and reel/ SD101B R = 50 V, VF max. 400 mV Single SD101B at IF = 1 mA SD101B-TAP ammopack V SD101C-TR or Tape and reel/ SD101C R = 40 V, VF max. 390 mV Single SD101C at IF = 1 mA SD101C-TAP ammopack
ABSOLUTE MAXIMUM RATINGS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
SD101A VR 60 V Reverse voltage SD101B VR 50 V SD101C VR 40 V Forward continuous current IF 30 mA Peak forward surge current tp = 10 μs IFSM 2 A Repetitive peak forward current IFRM 150 mA Power dissipation (1) Ptot 310 mW
Note
(1) Valid provided that electrodes are kept at ambient temperature
THERMAL CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction temperature Tj 125 °C Storage temperature range Tstg -65 to +150 °C Thermal resistance junction to ambient air (1) RthJA 320 K/W
Note
(1) Valid provided that electrodes are kept at ambient temperature Rev. 1.8, 01-Jun-17
1
Document Number: 85629 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Semiconductors
Small Signal Schottky Diodes FEATURES
• Integrated protection ring against static discharge • Low capacitance • Low leakage current • Low forward voltage drop • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
DESIGN SUPPORT TOOLS
click logo to get started
APPLICATIONS
• HF-detector Models • Protection circuit Available • Diode for low currents with a low supply voltage
MECHANICAL DATA
• Small battery charger
Case:
DO-35 (DO-204AH) • Power supplies
Weight:
approx. 125 mg • DC/DC converter for notebooks
Cathode band color:
black
Packaging codes/options:
TR/10K per 13" reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box
PARTS TABLE CIRCUIT PART TYPE DIFFERENTATION ORDERING CODE TYPE MARKING REMARKS CONFIGURATION
V SD101A-TR or Tape and reel/ SD101A R = 60 V, VF max. 410 mV Single SD101A at IF = 1 mA SD101A-TAP ammopack V SD101B-TR or Tape and reel/ SD101B R = 50 V, VF max. 400 mV Single SD101B at IF = 1 mA SD101B-TAP ammopack V SD101C-TR or Tape and reel/ SD101C R = 40 V, VF max. 390 mV Single SD101C at IF = 1 mA SD101C-TAP ammopack
ABSOLUTE MAXIMUM RATINGS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
SD101A VR 60 V Reverse voltage SD101B VR 50 V SD101C VR 40 V Forward continuous current IF 30 mA Peak forward surge current tp = 10 μs IFSM 2 A Repetitive peak forward current IFRM 150 mA Power dissipation (1) Ptot 310 mW
Note
(1) Valid provided that electrodes are kept at ambient temperature
THERMAL CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction temperature Tj 125 °C Storage temperature range Tstg -65 to +150 °C Thermal resistance junction to ambient air (1) RthJA 320 K/W
Note
(1) Valid provided that electrodes are kept at ambient temperature Rev. 1.8, 01-Jun-17
1
Document Number: 85629 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000