Datasheet 1N914 (Vishay) - 2

1N914 Vishay Semiconductors Electrical Characteristics
Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Min. Typ. Max. Unit Forward voltage IF = 10 mA VF 1000 mV Breakdown voltage IR = 100 µA V(BR) 100 V VR = 75 V IR 5 µA Peak reverse current VR = 20 V, Tj = 150 °C IR 50 µA VR = 20 V IR 25 nA Diode capacitance VR = 0, f = 1 MHz CD 4 pF IF = 10 mA to IR = 1 mA, Reverse recovery time t V rr 4 ns R = 6 V, RL = 100 Ω
Typical Characteristics
Tamb = 25 °C, unless otherwise specified 1000 1000 1N914 100 T = 25 °C j 100 rrent (mA) Scattering Limit rrent (nA) u u 10 Scattering Limit ard C w erse C v 10 1 - For - Re I F I R T = 25 °C j 0.1 1 0 0.4 0.8 1.2 1.6 2.0 10 1 100 94 9170_1 V 94 9098 V - Reverse Voltage (V) F - Forward Voltage (V) R Figure 1. Forward Current vs. Forward Voltage Figure 2. Reverse Current vs. Reverse Voltage
Package Dimensions
in millimeters (inches):
DO-35
Cathode identification max (0.022) 26 (1.024) min. 3.9 (0.154) max. 26 (1.024) min. 0.55. 1.7 (0.067) 1.5 (0.059) Rev. 6 - Date: 29. January 2007 Document no.: 6.560-5004.02-4 94 9366 www.vishay.com For technical questions within your region, please contact one of the following: Document Number 85622 2 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.8, 17-Aug-10 Document Outline Datasheet Disclaimer