Datasheet 2N6052 (ON Semiconductor)
| Fabricante | ON Semiconductor |
| Descripción | 12 A, 100 V PNP Darlington Complementary Silicon Power Transistors |
| Páginas / Página | 6 / 1 — Preferred Device. Features. http://onsemi.com. 12 AMPERE. COMPLEMENTARY … |
| Revisión | 5 |
| Formato / tamaño de archivo | PDF / 186 Kb |
| Idioma del documento | Inglés |
Preferred Device. Features. http://onsemi.com. 12 AMPERE. COMPLEMENTARY SILICON. POWER TRANSISTOR. 100 VOLTS, 150 WATTS
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link to page 1 2N6052
Preferred Device
Darlington Complementary Silicon Power Transistors This package is designed for general−purpose amplifier and low frequency switching applications.
Features http://onsemi.com
• High DC Current Gain — hFE = 3500 (Typ) @ IC = 5.0 Adc • Collector−Emitter Sustaining Voltage — @ 100 mA
12 AMPERE
VCEO(sus) = 100 Vdc (Min)
COMPLEMENTARY SILICON
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors
POWER TRANSISTOR
• This is a Pb−Free Device*
100 VOLTS, 150 WATTS MAXIMUM RATINGS
(Note 1)
Rating Symbol Value Unit
COLLECTOR CASE Collector−Emitter Voltage VCEO 100 Vdc Collector−Base Voltage V BASE CB 100 Vdc 1 Emitter−Base Voltage VEB 5.0 Vdc Collector Current − Continuous IC 12 Adc Peak 20 EMITTER 2 Base Current IB 0.2 Adc Total Power Dissipation @ TC = 25°C PD 150 W
MARKING
Derate above 25°C 0.857 W/°C
DIAGRAM
Operating and Storage Temperature TJ, Tstg −65 to + 200 °C Range
THERMAL CHARACTERISTICS
2N6052G
Characteristic Symbol Max Unit
1 AYYWW 2 Thermal Resistance, Junction−to−Case Rq MEX JC 1.17 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended
TO−204AA (TO−3)
Operating Conditions is not implied. Extended exposure to stresses above the
CASE 1−07
Recommended Operating Conditions may affect device reliability.
STYLE 1
1. Indicates JEDEC Registered Data. 160 2N6052 = Device Code 140 G = Pb−Free Package TTS) A = Location Code A 120 YY = Year WW = Work Week 100 TION (W MEX = Country of Orgin A 80 60
ORDERING INFORMATION
40 , POWER DISSIP
Device Package Shipping
DP 20 2N6052G TO−3 100 Units/Tray (Pb−Free) 0 0 25 50 75 100 125 150 175 200 TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating Preferred
devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
September, 2008 − Rev. 5 2N6052/D
Preferred Device
Darlington Complementary Silicon Power Transistors This package is designed for general−purpose amplifier and low frequency switching applications.
Features http://onsemi.com
• High DC Current Gain — hFE = 3500 (Typ) @ IC = 5.0 Adc • Collector−Emitter Sustaining Voltage — @ 100 mA
12 AMPERE
VCEO(sus) = 100 Vdc (Min)
COMPLEMENTARY SILICON
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors
POWER TRANSISTOR
• This is a Pb−Free Device*
100 VOLTS, 150 WATTS MAXIMUM RATINGS
(Note 1)
Rating Symbol Value Unit
COLLECTOR CASE Collector−Emitter Voltage VCEO 100 Vdc Collector−Base Voltage V BASE CB 100 Vdc 1 Emitter−Base Voltage VEB 5.0 Vdc Collector Current − Continuous IC 12 Adc Peak 20 EMITTER 2 Base Current IB 0.2 Adc Total Power Dissipation @ TC = 25°C PD 150 W
MARKING
Derate above 25°C 0.857 W/°C
DIAGRAM
Operating and Storage Temperature TJ, Tstg −65 to + 200 °C Range
THERMAL CHARACTERISTICS
2N6052G
Characteristic Symbol Max Unit
1 AYYWW 2 Thermal Resistance, Junction−to−Case Rq MEX JC 1.17 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended
TO−204AA (TO−3)
Operating Conditions is not implied. Extended exposure to stresses above the
CASE 1−07
Recommended Operating Conditions may affect device reliability.
STYLE 1
1. Indicates JEDEC Registered Data. 160 2N6052 = Device Code 140 G = Pb−Free Package TTS) A = Location Code A 120 YY = Year WW = Work Week 100 TION (W MEX = Country of Orgin A 80 60
ORDERING INFORMATION
40 , POWER DISSIP
Device Package Shipping
DP 20 2N6052G TO−3 100 Units/Tray (Pb−Free) 0 0 25 50 75 100 125 150 175 200 TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating Preferred
devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
September, 2008 − Rev. 5 2N6052/D