Datasheet 2N6052, 2N6058, 2N6059 (ON Semiconductor) - 5
| Fabricante | ON Semiconductor |
| Descripción | Darlington Complementary Silicon Power Transistors |
| Páginas / Página | 7 / 5 — 2N6052. PNP. NPN. 2N6058, 2N6059. Figure 9. DC Current Gain. Figure 10. … |
| Formato / tamaño de archivo | PDF / 180 Kb |
| Idioma del documento | Inglés |
2N6052. PNP. NPN. 2N6058, 2N6059. Figure 9. DC Current Gain. Figure 10. Collector Saturation Region. Figure 11. “On” Voltages
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2N6052 PNP NPN 2N6052 2N6058, 2N6059
20,000 40,000 V V CE = 3.0 V CE = 3.0 V T 10,000 J = 150°C 20,000 TJ = 150°C 10,000 GAIN 5000 GAIN 3000 6,000 25°C 25°C 2000 4,000 , DC CURRENT 1000 −55 °C , DC CURRENT 2,000 FE FE h h 500 1,000 −55 °C 300 600 200 400 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 9. DC Current Gain
TS) 3.0 TS) 3.0 TJ = 25°C TJ = 25°C (VOL (VOL 2.6 2.6 IC = 3.0 A 6.0 A 9.0 A 12 A TAGE TAGE IC = 3.0 A 6.0 A 9.0 A 12 A VOL VOL 2.2 2.2 1.8 1.8 OR−EMITTER OR−EMITTER 1.4 1.4 , COLLECT , COLLECT CE CE V 1.0 V 1.0 0.5 1.0 2.0 3.0 5.0 10 20 30 50 0.5 1.0 2.0 3.0 5.0 10 20 30 50 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)
Figure 10. Collector Saturation Region
3.0 3.0 TJ = 25°C TJ = 25°C 2.5 2.5 TS) TS) 2.0 (VOL (VOL 2.0 TAGE TAGE 1.5 VBE(sat) @ IC/IB = 250 1.5 VBE(sat) @ IC/IB = 250 , VOL , VOL V V V BE @ VCE = 3.0 V VBE @ VCE = 3.0 V 1.0 1.0 V V CE(sat) @ IC/IB = 250 CE(sat) @ IC/IB = 250 0.5 0.5 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 11. “On” Voltages http://onsemi.com 5
20,000 40,000 V V CE = 3.0 V CE = 3.0 V T 10,000 J = 150°C 20,000 TJ = 150°C 10,000 GAIN 5000 GAIN 3000 6,000 25°C 25°C 2000 4,000 , DC CURRENT 1000 −55 °C , DC CURRENT 2,000 FE FE h h 500 1,000 −55 °C 300 600 200 400 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 9. DC Current Gain
TS) 3.0 TS) 3.0 TJ = 25°C TJ = 25°C (VOL (VOL 2.6 2.6 IC = 3.0 A 6.0 A 9.0 A 12 A TAGE TAGE IC = 3.0 A 6.0 A 9.0 A 12 A VOL VOL 2.2 2.2 1.8 1.8 OR−EMITTER OR−EMITTER 1.4 1.4 , COLLECT , COLLECT CE CE V 1.0 V 1.0 0.5 1.0 2.0 3.0 5.0 10 20 30 50 0.5 1.0 2.0 3.0 5.0 10 20 30 50 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)
Figure 10. Collector Saturation Region
3.0 3.0 TJ = 25°C TJ = 25°C 2.5 2.5 TS) TS) 2.0 (VOL (VOL 2.0 TAGE TAGE 1.5 VBE(sat) @ IC/IB = 250 1.5 VBE(sat) @ IC/IB = 250 , VOL , VOL V V V BE @ VCE = 3.0 V VBE @ VCE = 3.0 V 1.0 1.0 V V CE(sat) @ IC/IB = 250 CE(sat) @ IC/IB = 250 0.5 0.5 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 11. “On” Voltages http://onsemi.com 5