Datasheet VBUS05M2-HT5 (Vishay) - 2
| Fabricante | Vishay |
| Descripción | 2-Line Low Capacitance, Bidirectional and Symmetrical (BiSy) ESD Protection Diode |
| Páginas / Página | 5 / 2 — VBUS05M2-HT5. ELECTRICAL CHARACTERISTICS. PARAMETER. TEST … |
| Formato / tamaño de archivo | PDF / 106 Kb |
| Idioma del documento | Inglés |
VBUS05M2-HT5. ELECTRICAL CHARACTERISTICS. PARAMETER. TEST CONDITIONS/REMARKS. SYMBOL. MIN. TYP. MAX. UNIT. APPLICATION NOTE
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VBUS05M2-HT5
www.vishay.com Vishay Semiconductors
ELECTRICAL CHARACTERISTICS
(pin 1 or pin 2 to pin 3; in both directions) (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel - - 2 lines Reverse stand-off voltage Max. reverse working voltage VRWM - - 5.5 V Reverse voltage At IR = 0.1 μA VR 5.5 - - V Reverse current At VRWM = 5.5 V IR - < 0.001 0.1 μA Reverse breakdown voltage At IR = 1 mA VBR 7.5 8.5 9.5 V At IPP = 1 A VC - 11 13 V Reverse clamping voltage At IPP = IPPM = 3.4 A VC - 15 18 V Transmission line pulse (TLP), tp = 100 ns V I C-TLP - 20 - V TLP = 8 A Clamping voltage Transmission line pulse (TLP), tp = 100 ns V I C-TLP - 27 - V TLP = 16 A Dynamic resistance Transmission line pulse (TLP), tp = 100 ns RDYN - 1 - Ω At VR = 0 V; f = 1 MHz - 0.37 0.45 pF Capacitance CD At VR = 3.3 V; f = 1 MHz - 0.37 0.45 pF
APPLICATION NOTE
The VBUS05M2-HT5 is a two-line ESD protection device with a bidirectional and symmetrical (BiSy) breakdown and clamping performance made for application with a voltage working range up to ± 5.5 V. The high ESD immunity and a very low capacitance makes it usable for high frequency applications like USB2.0, USB3.0, or HDMI. With the VBUS05M2-HT5 two high speed data lines can be protected against transient voltage signals like ESD (electro static discharge). Connected to the data line (pin 1 and pin 2) and to ground (pin 3) negative transients will be clamped close above the 5.5 V working range.
SCHEMATIC DIAGRAM
3 DP = DN ZD 1 2 Fig. A The simplified schematic diagram in Fig. A shows three identical Z-diodes with the cathode on pin 1, 2, or 3 and common anodes. In reality each Z-diode consist of one Z-diode for the adjustment of the breakdown voltage, and two low capacitance switching diodes which provide the low capacitance. Positive transients will be clamped through the switching diode DP and the Z-diode ZD while negative transients will be clamped through the switching diode DN. Rev. 1.3, 16-Mar-2021
2
Document Number: 86166 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Semiconductors
ELECTRICAL CHARACTERISTICS
(pin 1 or pin 2 to pin 3; in both directions) (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel - - 2 lines Reverse stand-off voltage Max. reverse working voltage VRWM - - 5.5 V Reverse voltage At IR = 0.1 μA VR 5.5 - - V Reverse current At VRWM = 5.5 V IR - < 0.001 0.1 μA Reverse breakdown voltage At IR = 1 mA VBR 7.5 8.5 9.5 V At IPP = 1 A VC - 11 13 V Reverse clamping voltage At IPP = IPPM = 3.4 A VC - 15 18 V Transmission line pulse (TLP), tp = 100 ns V I C-TLP - 20 - V TLP = 8 A Clamping voltage Transmission line pulse (TLP), tp = 100 ns V I C-TLP - 27 - V TLP = 16 A Dynamic resistance Transmission line pulse (TLP), tp = 100 ns RDYN - 1 - Ω At VR = 0 V; f = 1 MHz - 0.37 0.45 pF Capacitance CD At VR = 3.3 V; f = 1 MHz - 0.37 0.45 pF
APPLICATION NOTE
The VBUS05M2-HT5 is a two-line ESD protection device with a bidirectional and symmetrical (BiSy) breakdown and clamping performance made for application with a voltage working range up to ± 5.5 V. The high ESD immunity and a very low capacitance makes it usable for high frequency applications like USB2.0, USB3.0, or HDMI. With the VBUS05M2-HT5 two high speed data lines can be protected against transient voltage signals like ESD (electro static discharge). Connected to the data line (pin 1 and pin 2) and to ground (pin 3) negative transients will be clamped close above the 5.5 V working range.
SCHEMATIC DIAGRAM
3 DP = DN ZD 1 2 Fig. A The simplified schematic diagram in Fig. A shows three identical Z-diodes with the cathode on pin 1, 2, or 3 and common anodes. In reality each Z-diode consist of one Z-diode for the adjustment of the breakdown voltage, and two low capacitance switching diodes which provide the low capacitance. Positive transients will be clamped through the switching diode DP and the Z-diode ZD while negative transients will be clamped through the switching diode DN. Rev. 1.3, 16-Mar-2021
2
Document Number: 86166 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000