Datasheet BSS89 (Infineon) - 5
| Fabricante | Infineon |
| Descripción | SIPMOS Small-Signal-Transistor |
| Páginas / Página | 8 / 5 — Rev. 2.2. BSP89. 5 Typ. output characteristic. 6 Typ. drain-source on … |
| Revisión | 02_02 |
| Formato / tamaño de archivo | PDF / 668 Kb |
| Idioma del documento | Inglés |
Rev. 2.2. BSP89. 5 Typ. output characteristic. 6 Typ. drain-source on resistance. 7 Typ. transfer characteristics
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Rev. 2.2 BSP89 5 Typ. output characteristic 6 Typ. drain-source on resistance
ID = f (VDS) RDS(on) = f (ID) parameter: Tj = 25 °C, VGS parameter: Tj = 25 °C, VGS 0.6 9 W A 7 0.4 6 DS(on) I D R 5 0.3 4 3V 3V 3.4V 0.2 3.4V 3 3.6V 3.6V 4.2V 4.2V 4.6V 2 4.6V 0.1 5V 5V 6V 6V 1 10V 10V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 0 0.1 0.2 0.3 0.4 A 0.6 VDS ID
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID= f ( VGS ); VDS³ 2 x ID x RDS(on)max gfs = f(ID) parameter: Tj = 25 °C parameter: Tj = 25 °C 0.6 0.6 A S 0.4 0.4 I D g fs 0.3 0.3 0.2 0.2 0.1 0.1 0 0 0 0.5 1 1.5 2 2.5 V 3.5 0 0.1 0.2 0.3 0.4 A 0.6 VGS ID Page 5 2012-11-29
ID = f (VDS) RDS(on) = f (ID) parameter: Tj = 25 °C, VGS parameter: Tj = 25 °C, VGS 0.6 9 W A 7 0.4 6 DS(on) I D R 5 0.3 4 3V 3V 3.4V 0.2 3.4V 3 3.6V 3.6V 4.2V 4.2V 4.6V 2 4.6V 0.1 5V 5V 6V 6V 1 10V 10V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 0 0.1 0.2 0.3 0.4 A 0.6 VDS ID
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID= f ( VGS ); VDS³ 2 x ID x RDS(on)max gfs = f(ID) parameter: Tj = 25 °C parameter: Tj = 25 °C 0.6 0.6 A S 0.4 0.4 I D g fs 0.3 0.3 0.2 0.2 0.1 0.1 0 0 0 0.5 1 1.5 2 2.5 V 3.5 0 0.1 0.2 0.3 0.4 A 0.6 VGS ID Page 5 2012-11-29