Datasheet SQJA81EP (Vishay) - 4

SQJA81EP
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(TA = 25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 0.10 10000 T = 150 °C T = 25 °C ) 0.08 ) 10 J J Ω (A 1000 1000 0.06 rrent u ne ne ine ne ne ine 1 1st li 2nd li 2nd l 1st li n-Resistance ( 2nd li 2nd l 0.04 ource C O T = 150 °C S 100 - J 100 - (on) I S 0.1 S D 0.02 R T = 25 °C J 0.01 10 0.00 10 0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 V - Source-to-Drain Voltage (V) V - Gate-to-Source Voltage (V) SD GS
Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
Axis Title Axis Title 1.1 10000 -80 10000 I = 250 μA D I = 1 mA D ) 0.8 (V -84 ) ltage 1000 o 1000 0.5 -88 nce (V a ne ne ine ne ne ine ari ource V V I = 5 mA D 1st li - 2nd li 2nd l 1st li 2nd li 2nd l ) 0.2 -92 (th 100 100 GSV rain-to-S D -0.1 - -96 DSV -0.4 10 -100 10 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175 T - Junction Temperature (°C) T - Junction Temperature (°C) J J
Threshold Voltage Drain Source Breakdown vs. Junction Temperature
Axis Title Axis Title 2.0 10000 1000 10000 I = 10 A D d) e liz 1.7 100 a V = 10 V GS ) 1000 I limited 100 μs DM 1000 1.4 10 ne ne rrent (A 1 ms ne ine ne ine u V = 4.5 V C GS 1st li 10 ms 2nd li n 1st li 2nd l 2nd li 1.1 2nd l 1 rai 100 ms, 1 s, 100 D a 100 n-Resistance (Norm - Limited by R 10 s, DC DS(on) O I D BVDSS limited - 0.8 0.1 (on) S T = 25 °C, D C R single pulse 0.5 10 0.01 10 -50 -25 0 25 50 75 100 125 150 175 0.01 0.1 1 10 100 T - Junction Temperature (°C) V - Drain-to-Source Voltage (V) J DS
On-Resistance vs. Junction Temperature Safe Operating Area Note
a. VGS > minimum VGS at which RDS(on) is specified S20-0012-Rev. A, 27-Jan-2020
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