Datasheet TIPL762, TIPL762A (Bourns) - 5
| Fabricante | Bourns |
| Descripción | NPN SILICON POWER TRANSISTORS |
| Páginas / Página | 6 / 5 — TIPL762, TIPL762A. NPN SILICON POWER TRANSISTORS. TYPICAL … |
| Formato / tamaño de archivo | PDF / 167 Kb |
| Idioma del documento | Inglés |
TIPL762, TIPL762A. NPN SILICON POWER TRANSISTORS. TYPICAL CHARACTERISTICS. COLLECTOR CUT-OFF CURRENT. CASE TEMPERATURE. t - µ n
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TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS COLLECTOR CUT-OFF CURRENT vs CASE TEMPERATURE
TCP762AF
10 A t - µ n 1·0 rre ff Cu TIPL762A t-o V = 1000 V CE 0·1 r Cu to c lle TIPL762 V = 850 V CE - Co S 0·01 I CE
E
0·001 -80 -60 -40 -20 0 20 40 60 80 100 120 140 T - Case Temperature - °C C Figure 7. MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA
SAP762AB
100
OBSOLET
10 t - A n rre r Cu to 1·0 c lle - Co I C 0.1 t = 100
µ
s p t = 1 ms p t = 10 ms p TIPL762 DC Operation TIPL762A 0·01 1·0 10 100 1000 V - Collector-Emitter Voltage - V CE Figure 8.
AUGUST 1978 - REVISED SEPTEMBER 2002 5 Specifications are subject to change without notice.
TCP762AF
10 A t - µ n 1·0 rre ff Cu TIPL762A t-o V = 1000 V CE 0·1 r Cu to c lle TIPL762 V = 850 V CE - Co S 0·01 I CE
E
0·001 -80 -60 -40 -20 0 20 40 60 80 100 120 140 T - Case Temperature - °C C Figure 7. MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA
SAP762AB
100
OBSOLET
10 t - A n rre r Cu to 1·0 c lle - Co I C 0.1 t = 100
µ
s p t = 1 ms p t = 10 ms p TIPL762 DC Operation TIPL762A 0·01 1·0 10 100 1000 V - Collector-Emitter Voltage - V CE Figure 8.
AUGUST 1978 - REVISED SEPTEMBER 2002 5 Specifications are subject to change without notice.