Datasheet 2SK2225 (Renesas) - 4

2SK2225 Static Drain to Source on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current ) Ω ( 20 10 ⏐ (S) fs I 5 VDS = 25 V DS (on) D = 2 A ⏐y 16 Pulse Test 2 12 Tc = –25°C 0.5 A, 1 A 25°C 1 75°C 8 0.5 4 VGS = 15 V 0.2 Pulse Test 0 0.1 –40 0 40 80 120 160 Forward Transfer Admittance 0.05 0.1 0.2 0.5 1 2 5 Static Drain to Source on State Resistance R Case Temperature TC (°C) Drain Current ID (A) Body to Drain Diode Reverse Typical Capacitance vs. Recovery Time Drain to Source Voltage 5000 10000 VGS = 0 (ns) f = 1 MHz rr 2000 Ciss 1000 1000 500 di / dt = 100 A / μs, Ta = 25°C 100 Coss 200 VGS = 0, Pulse Test Capacitance C (pF) Crss 100 Reverse Recovery Time t 50 10 0.05 0.1 0.2 0.5 1 2 5 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 1000 20 1000 V (V) (V) GS = 10 V VDD = 250 V 500 PW = 2 μs DS 800 400 V 16 GS duty < 1 % 600 V V td(off) GS VDS 200 600 12 100 tf 400 8 50 tr V 200 DD = 250 V 4 Switching Time t (ns) 400 V I td(on) D = 2.5 A 20 600 V Drain to Source Voltage V Gate to Source Voltage V 0 10 0 20 40 60 80 100 0.05 0.1 0.2 0.5 1 2 5 Gate Charge Qg (nc) Drain Current ID (A) R07DS1358EJ0400 Rev.4.00 Page 4 of 6 Dec 06, 2017