Datasheet C2M0080170P (Wolfspeed) - 7
| Fabricante | Wolfspeed |
| Descripción | Silicon Carbide Power MOSFET 1700 V 40 A 80 mΩ |
| Páginas / Página | 10 / 7 — Typical Performance. 1.8. 1.5. Conditions:. TJ = 25 °C. IDS = 20 A. VDD = … |
| Formato / tamaño de archivo | PDF / 1.2 Mb |
| Idioma del documento | Inglés |
Typical Performance. 1.8. 1.5. Conditions:. TJ = 25 °C. IDS = 20 A. VDD = 1200 V. 1.2. RG(ext) = 2.5 Ω. VGS = -5V/+20 V. FWD = C2M0080170P
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Typical Performance 1.8 1.5 Conditions: Conditions: TJ = 25 °C IDS = 20 A 1.5 VDD = 1200 V VDD = 1200 V IDS = 20 A 1.2 RG(ext) = 2.5 Ω VGS = -5V/+20 V VGS = -5V/+20 V FWD = C2M0080170P ETotal FWD = C3M0080170P 1.2 L = 200 μH E J) Total J) (- - -)FWD = C3D10170H L = 200 μH (m 0.9 (m EOn 0.9 EOn 0.6 itching Loss 0.6 itching Loss ETotal Sw Sw 0.3 EOn 0.3 EOff EOff 0.0 0.0 0 5 10 15 20 25 0 25 50 75 100 125 150 175 External Gate Resistor RG(ext) (Ohms) Junction Temperature, TJ (°C)
Figure 26. Clamped Inductive Switching Energy vs. Figure 25. Clamped Inductive Switching Energy vs. RG(ext) Temperature
100 Conditions: TJ = 25 °C VDD = 1200 V 80 IDS = 20 A VGS = -5V/+20 V td(off) FWD = C2M0080170P L = 200 μH 60 es (ns) im td(on) 40 itching T tf Sw 20 tr 0 0 5 10 15 20 25 External Gate Resistor RG(ext) (Ohms)
Figure 27. Switching Times vs. R Figure 28. Switching Times Definition G(ext)
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C2M0080170P Rev. A, 05-2018
Figure 26. Clamped Inductive Switching Energy vs. Figure 25. Clamped Inductive Switching Energy vs. RG(ext) Temperature
100 Conditions: TJ = 25 °C VDD = 1200 V 80 IDS = 20 A VGS = -5V/+20 V td(off) FWD = C2M0080170P L = 200 μH 60 es (ns) im td(on) 40 itching T tf Sw 20 tr 0 0 5 10 15 20 25 External Gate Resistor RG(ext) (Ohms)
Figure 27. Switching Times vs. R Figure 28. Switching Times Definition G(ext)
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C2M0080170P Rev. A, 05-2018