Datasheet C2M0080170P (Wolfspeed) - 5
| Fabricante | Wolfspeed |
| Descripción | Silicon Carbide Power MOSFET 1700 V 40 A 80 mΩ |
| Páginas / Página | 10 / 5 — Typical Performance. -10. (A). GS = 0 V. VGS = 0 V. -20. , I DS. GS = 5 … |
| Formato / tamaño de archivo | PDF / 1.2 Mb |
| Idioma del documento | Inglés |
Typical Performance. -10. (A). GS = 0 V. VGS = 0 V. -20. , I DS. GS = 5 V. -30. rent. VGS = 10 V. -40. ce C. VGS = 15 V. -50. in-Sour. GS = 20 V. -60
Línea de modelo para esta hoja de datos
Versión de texto del documento
Typical Performance -6 -5 -4 -3 -2 -1 0 -6 -5 -4 -3 -2 -1 0 0 0 -10 V -10 (A) GS = 0 V (A) VGS = 0 V -20 -20 , I DS , I DS V V GS = 5 V GS = 5 V -30 rent -30 rent ur VGS = 10 V ur -40 ce C -40 ce C VGS = 15 V VGS = 10 V -50 -50 in-Sour V in-Sour GS = 20 V V -60 GS = 15 V Dra -60 Dra V -70 GS = 20 V -70 Conditions: Conditions: T -80 T -80 J = -55 °C J = 25 °C tp < 200 µs tp < 200 µs -90 -90 Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V)
Figure 13. 3rd Quadrant Characteristic at -55 ºC Figure 14. 3rd Quadrant Characteristic at 25 ºC
-6 -5 -4 -3 -2 -1 0 70 0 60 VGS = 0 V -10 (A) -20 50 , I DS VGS = 5 V (µJ) V SS GS = 10 V -30 rent 40 ur VGS = 20 V V -40 ce C rgy, E O GS = 15 V 30 Ene -50 in-Sour 20 -60 Dra Stored -70 10 Conditions: T -80 J = 150 °C 0 tp < 200 µs 0 200 400 600 800 1000 1200 -90 Drain-Source Voltage V Drain to Source Voltage, V DS (V) DS (V)
Figure 15. 3rd Quadrant Characteristic at 150 ºC Figure 16. Output Capacitor Stored Energy
Conditions: Conditions: TJ = 25 °C TJ = 25 °C 10000 VAC = 25 mV 10000 VAC = 25 mV f = 1 MHz f = 1 MHz Ciss Ciss F) 1000 F) 1000 ce (p Coss ce (p itan itan Coss ac 100 ac 100 Cap Cap 10 Crss 10 Crss 1 1 0 50 100 150 200 0 100 200 300 400 500 600 700 800 900 Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V)
Figure 17. Capacitances vs. Drain-Source Figure 18. Capacitances vs. Drain-Source Voltage (0 - 200V) Voltage (0 - 1000V)
5
C2M0080170P Rev. A, 05-2018
Figure 13. 3rd Quadrant Characteristic at -55 ºC Figure 14. 3rd Quadrant Characteristic at 25 ºC
-6 -5 -4 -3 -2 -1 0 70 0 60 VGS = 0 V -10 (A) -20 50 , I DS VGS = 5 V (µJ) V SS GS = 10 V -30 rent 40 ur VGS = 20 V V -40 ce C rgy, E O GS = 15 V 30 Ene -50 in-Sour 20 -60 Dra Stored -70 10 Conditions: T -80 J = 150 °C 0 tp < 200 µs 0 200 400 600 800 1000 1200 -90 Drain-Source Voltage V Drain to Source Voltage, V DS (V) DS (V)
Figure 15. 3rd Quadrant Characteristic at 150 ºC Figure 16. Output Capacitor Stored Energy
Conditions: Conditions: TJ = 25 °C TJ = 25 °C 10000 VAC = 25 mV 10000 VAC = 25 mV f = 1 MHz f = 1 MHz Ciss Ciss F) 1000 F) 1000 ce (p Coss ce (p itan itan Coss ac 100 ac 100 Cap Cap 10 Crss 10 Crss 1 1 0 50 100 150 200 0 100 200 300 400 500 600 700 800 900 Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V)
Figure 17. Capacitances vs. Drain-Source Figure 18. Capacitances vs. Drain-Source Voltage (0 - 200V) Voltage (0 - 1000V)
5
C2M0080170P Rev. A, 05-2018