Datasheet TSV7721, TSV7722, TSV7723 (STMicroelectronics) - 5
| Fabricante | STMicroelectronics |
| Descripción | High bandwidth (22 MHz) low offset (200 μV) 5 V op amp |
| Páginas / Página | 33 / 5 — TSV7721, TSV7722, TSV7723. Electrical characteristics. Symbol. Parameter. … |
| Formato / tamaño de archivo | PDF / 4.5 Mb |
| Idioma del documento | Inglés |
TSV7721, TSV7722, TSV7723. Electrical characteristics. Symbol. Parameter. Conditions. Min. Typ. Max. Unit
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TSV7721, TSV7722, TSV7723 Electrical characteristics Symbol Parameter Conditions Min. Typ. Max. Unit
Overload recovery time: trec is defined as trec delay between input voltage edge and VOUT 70 ns reaching 100 mV from initial value ts Settling time To 0.1%, Vin = 1 Vp-p 270 ns f = 1 kHz 13 en Equivalent input noise voltage nV/√Hz f = 10 kHz 7 Channel separation CS f = 1 kHz 120 dB (for TSV7722 and TSV7723) Differential 6 Cin Input capacitance pF Common-mode 4.5
SHDN characteristics (TSV7723 only, SHDN active low)
T = 25°C 2.5 50 Supply current per channel in shutdown nA ICC mode VOUT = VCC / 2, RL > 1 MΩ, SHDN -40°C < T < 85°C 450 = VCC- -40°C < T < 125°C 4 µA t Amplifier turn-on time (other channel on V already on) OUT = VCC- to VCC- + 0.2 V 2 µs tinit Initialization time (both channels off) VOUT to 200 mV of final value 7 µs VIH SHDN logic high 2 V VIL SHDN logic low 0.8 IIH SHDN current high SHDN = VCC+ TBD pA IIL SHDN current low SHDN = VCC- TBD Output leakage in shutdown mode, T = 25°C TBD pA IOleak SHDN = VCC- -40°C < T < 125°C TBD nA 1. Slew rate value is calculated as the average between positive and negative slew rates.
DS13614
-
Rev 1 page 5/33
Document Outline Features Applications Description 1 Pin connections 2 Absolute maximum ratings and operating conditions 3 Electrical characteristics 4 Typical performance characteristics 5 Application information 5.1 Operating voltages 5.2 Input offset voltage drift over the temperature 5.3 Unused channel 5.4 EMI rejection 5.5 Maximum power dissipation 5.6 Capacitive load and stability 5.7 Resistor values for high speed op amp design 5.8 Settling time 5.9 PCB layout recommendations 5.10 Decoupling capacitor 5.11 Macro model 6 Typical applications 6.1 Low-side current sensing 6.2 Photodiode transimpedance amplification 7 Package information 7.1 SOT23-5 package information 7.2 DFN8 2x2 package information 7.3 MiniSO8 package information 7.4 SO-8 package information 7.5 MiniSO10 package information 8 Ordering information Revision history
Overload recovery time: trec is defined as trec delay between input voltage edge and VOUT 70 ns reaching 100 mV from initial value ts Settling time To 0.1%, Vin = 1 Vp-p 270 ns f = 1 kHz 13 en Equivalent input noise voltage nV/√Hz f = 10 kHz 7 Channel separation CS f = 1 kHz 120 dB (for TSV7722 and TSV7723) Differential 6 Cin Input capacitance pF Common-mode 4.5
SHDN characteristics (TSV7723 only, SHDN active low)
T = 25°C 2.5 50 Supply current per channel in shutdown nA ICC mode VOUT = VCC / 2, RL > 1 MΩ, SHDN -40°C < T < 85°C 450 = VCC- -40°C < T < 125°C 4 µA t Amplifier turn-on time (other channel on V already on) OUT = VCC- to VCC- + 0.2 V 2 µs tinit Initialization time (both channels off) VOUT to 200 mV of final value 7 µs VIH SHDN logic high 2 V VIL SHDN logic low 0.8 IIH SHDN current high SHDN = VCC+ TBD pA IIL SHDN current low SHDN = VCC- TBD Output leakage in shutdown mode, T = 25°C TBD pA IOleak SHDN = VCC- -40°C < T < 125°C TBD nA 1. Slew rate value is calculated as the average between positive and negative slew rates.
DS13614
-
Rev 1 page 5/33
Document Outline Features Applications Description 1 Pin connections 2 Absolute maximum ratings and operating conditions 3 Electrical characteristics 4 Typical performance characteristics 5 Application information 5.1 Operating voltages 5.2 Input offset voltage drift over the temperature 5.3 Unused channel 5.4 EMI rejection 5.5 Maximum power dissipation 5.6 Capacitive load and stability 5.7 Resistor values for high speed op amp design 5.8 Settling time 5.9 PCB layout recommendations 5.10 Decoupling capacitor 5.11 Macro model 6 Typical applications 6.1 Low-side current sensing 6.2 Photodiode transimpedance amplification 7 Package information 7.1 SOT23-5 package information 7.2 DFN8 2x2 package information 7.3 MiniSO8 package information 7.4 SO-8 package information 7.5 MiniSO10 package information 8 Ordering information Revision history