Datasheet STD30NF06 (STMicroelectronics) - 2
| Fabricante | STMicroelectronics |
| Descripción | N-Channel 60V - 0.020 Ohm - 28A - DPAK StripFET(TM) II POWER MOSFET |
| Páginas / Página | 10 / 2 — STD30NF06. THERMAL DATA. ELECTRICAL CHARACTERISTICS. Symbol. Parameter. … |
| Formato / tamaño de archivo | PDF / 472 Kb |
| Idioma del documento | Inglés |
STD30NF06. THERMAL DATA. ELECTRICAL CHARACTERISTICS. Symbol. Parameter. Test Conditions. Min. Typ. Max. Unit
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STD30NF06 THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 2.14 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W Tl Maximum Lead Temperature For Soldering Purpose 275 °C
ELECTRICAL CHARACTERISTICS
(Tcase = 25 °C unless otherwise specified) OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source ID = 250 µA, VGS = 0 60 V Breakdown Voltage IDSS Zero Gate Voltage VDS = Max Rating 1 µA Drain Current (VGS = 0) VDS = Max Rating TC = 100°C 10 µA IGSS Gate-body Leakage VGS = ± 20 V ±100 nA Current (VDS = 0) ON (*
) Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA 2 4 V Static Drain-source On V R GS = 10 V ID = 15 A 0.020 0.028 Ω DS(on) Resistance DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (*) Forward Transconductance VDS = 15 V ID = 15 A 40 S Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 1750 pF Coss Output Capacitance 220 pF Crss Reverse Transfer 70 pF Capacitance 2/10
Rthj-case Thermal Resistance Junction-case Max 2.14 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W Tl Maximum Lead Temperature For Soldering Purpose 275 °C
ELECTRICAL CHARACTERISTICS
(Tcase = 25 °C unless otherwise specified) OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source ID = 250 µA, VGS = 0 60 V Breakdown Voltage IDSS Zero Gate Voltage VDS = Max Rating 1 µA Drain Current (VGS = 0) VDS = Max Rating TC = 100°C 10 µA IGSS Gate-body Leakage VGS = ± 20 V ±100 nA Current (VDS = 0) ON (*
) Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA 2 4 V Static Drain-source On V R GS = 10 V ID = 15 A 0.020 0.028 Ω DS(on) Resistance DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (*) Forward Transconductance VDS = 15 V ID = 15 A 40 S Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 1750 pF Coss Output Capacitance 220 pF Crss Reverse Transfer 70 pF Capacitance 2/10