Datasheet STD30NF06L (STMicroelectronics) - 3
| Fabricante | STMicroelectronics |
| Descripción | N-Channel 60V - 0.022Ω - 35A DPAK/IPAK STripFET Power MOSFET |
| Páginas / Página | 10 / 3 — STD30NF06L. ELECTRICAL CHARACTERISTICS. Symbol. Parameter. Test … |
| Formato / tamaño de archivo | PDF / 476 Kb |
| Idioma del documento | Inglés |
STD30NF06L. ELECTRICAL CHARACTERISTICS. Symbol. Parameter. Test Conditions. Min. Typ. Max. Unit. Safe Operating Area
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STD30NF06L ELECTRICAL CHARACTERISTICS
(CONTINUED) SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on) Turn-on Delay Time VDD = 30 V, ID = 18 A 30 ns RG = 4.7Ω VGS = 4.5 V tr Rise Time (see test circuit, Figure 3) 105 ns Qg Total Gate Charge VDD = 48 V, ID = 38 A, 23 31 nC Qgs Gate-Source Charge VGS = 5 V 7 nC Q Gate-Drain Charge 10 nC gd SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(off) Turn-off-Delay Time VDD = 30 V, ID = 18 A, 65 ns tf Fall Time RG = 4.7Ω, VGS = 4.5 V 25 ns (see test circuit, Figure 3) SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD Source-drain Current 35 A ISDM (2) Source-drain Current (pulsed) 140 A VSD (1) Forward On Voltage ISD = 35 A, VGS = 0 1.5 V trr Reverse Recovery Time ISD = 38 A, di/dt = 100 A/µs, 70 ns Qrr Reverse Recovery Charge VDD = 15 V, Tj = 150°C 140 nC IRRM Reverse Recovery Current (see test circuit, Figure 5) 4 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area.
Safe Operating Area Normalized Thermal Impedence
3/10
(CONTINUED) SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on) Turn-on Delay Time VDD = 30 V, ID = 18 A 30 ns RG = 4.7Ω VGS = 4.5 V tr Rise Time (see test circuit, Figure 3) 105 ns Qg Total Gate Charge VDD = 48 V, ID = 38 A, 23 31 nC Qgs Gate-Source Charge VGS = 5 V 7 nC Q Gate-Drain Charge 10 nC gd SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(off) Turn-off-Delay Time VDD = 30 V, ID = 18 A, 65 ns tf Fall Time RG = 4.7Ω, VGS = 4.5 V 25 ns (see test circuit, Figure 3) SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD Source-drain Current 35 A ISDM (2) Source-drain Current (pulsed) 140 A VSD (1) Forward On Voltage ISD = 35 A, VGS = 0 1.5 V trr Reverse Recovery Time ISD = 38 A, di/dt = 100 A/µs, 70 ns Qrr Reverse Recovery Charge VDD = 15 V, Tj = 150°C 140 nC IRRM Reverse Recovery Current (see test circuit, Figure 5) 4 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area.
Safe Operating Area Normalized Thermal Impedence
3/10