Datasheet HMC413QS16G, 413QS16GE (Analog Devices)

HMC413QS16G / 413QS16GE
v04.0505
GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz Typical Applications Features
This amplifi er is ideal for use as a power/driver Gain: 23 dB amplifi er for 1.6 - 2.2 GHz applications: Saturated Power: +29.5 dBm • Cellular / PCS / 3G 42% PAE • Portable & Infrastructure Supply Voltage: +2.75V to +5V • Wireless Local Loop 11 Power Down Capability Low External Part Count Included in the HMC-DK002 Designer’s Kit T
Functional Diagram General Description
The HMC413QS16G & HMC413QS16GE are high - SM efficiency GaAs InGaP Heterojunction Bipolar Tran- S sistor (HBT) MMIC Power amplifi ers which operate R between 1.6 and 2.2 GHz. The amplifi er is packaged IE in a low cost, surface mount 16 leaded package with an exposed base for improved RF and thermal perfor- IF L mance. With a minimum of external components, the P amplifi er provides 23 dB of gain, +29.5 dBm of satu- M rated power at 42% PAE from a +5V supply voltage. The amplifi er can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/ R A E current control. W O
Electrical Specifi cations, T = +25° C, As a Function of Vs, Vpd = 3.6V A
Vs= 3.6V Vs= 5V & P Parameter Frequency Units Min. Typ. Max. Min. Typ. Max. R 1.6 - 1.7 GHz 18 21 19 22 dB A 1.7 - 2.0 GHz 19 22 20 23 dB Gain E 2.0 - 2.1 GHz 18 21 19 22 dB 2.1 - 2.2 GHz 17 20 18 21 dB IN Gain Variation Over Temperature 1.6 - 2.2 GHz 0.025 0.035 0.025 0.035 dB/°C L Input Return Loss 1.6 - 2.2 GHz 10 10 dB Output Return Loss 1.6 - 2.2 GHz 8 9 dB 1.6 - 1.7 GHz 20 23 23 26 dBm Output Power for 1 dB Compression (P1dB) 1.7 - 2.2 GHz 21 24 24 27 dBm 1.6 - 1.7 GHz 25.5 28.5 dBm Saturated Output Power (Psat) 1.7 - 2.2 GHz 26.5 29.5 dBm 1.6 - 1.7 GHz 32 35 36 39 dBm Output Third Order Intercept (IP3) 1.7 - 2.0 GHz 33 36 37 40 dBm 2.0 - 2.2 GHz 32 35 36 39 dBm Noise Figure 1.6 - 2.2 GHz 5.5 5.5 dB Supply Current (Icq) Vpd= 0V/3.6V 0.002/220 0.002/270 mA Control Current (Ipd) Vpd= 3.6V 7 7 mA Switching Speed tON, tOFF 80 80 ns Information furnish F e o d r pri by An ce, de alog Devic leis vie s rbyeli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. : 978 Phon -e25 : 7 0 81 -3 3 3 29 4 - 3 F 470 ax 0 • O : 978 rder o - nl 25 in 0 e a - t 33 ww 73
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