Datasheet HMC414MS8G, 414MS8GE (Analog Devices) - 2

FabricanteAnalog Devices
DescripciónGaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz
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HMC414MS8G / 414MS8GE. GaAs InGaP HBT MMIC. POWER AMPLIFIER, 2.2 - 2.8 GHz. Gain vs. Temperature, Vs= 3.6V

HMC414MS8G / 414MS8GE GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz Gain vs Temperature, Vs= 3.6V

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HMC414MS8G / 414MS8GE
v04.0607
GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz Gain vs. Temperature, Vs= 3.6V Gain vs. Temperature, Vs= 5V
30 30 25 25 20 20 (dB) (dB) 15 15 GAIN GAIN +25 C +25 C 10 +85 C 10 +85 C -40 C -40 C 11 5 5 0 0 T 2 2.2 2.4 2.6 2.8 3 2 2.2 2.4 2.6 2.8 3 FREQUENCY (GHz) FREQUENCY (GHz) - SM S
Return Loss, Vs= 3.6V Return Loss, Vs= 5V
R 0 0 IE -4 S11 -4 S11 IF S22 S22 L P -8 -8 M -12 -12 RETURN LOSS (dB) RETURN LOSS (dB) R A -16 -16 E -20 -20 W 2 2.2 2.4 2.6 2.8 3 2 2.2 2.4 2.6 2.8 3 O FREQUENCY (GHz) FREQUENCY (GHz) & P R
P1dB vs. Temperature, Vs= 3.6V P1dB vs. Temperature, Vs= 5V
A 32 32 E 28 28 IN 24 24 L 20 20 16 16 +25 C +25 C +85 C +85 C P1dB (dBm) 12 -40 C 12 -40 C P1dB (dBm) 8 8 4 4 0 0 2 2.2 2.4 2.6 2.8 3 2 2.2 2.4 2.6 2.8 3 FREQUENCY (GHz) FREQUENCY (GHz) Information furnish F e o d r pri by An ce, de alog Devic leis vie s rbyeli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. : 978 Pho - n 25 e: 7 0- 81 33 2 4 9- 3 F 470 ax: 978 0 • Order o - n 25 lin 0 e a-t 3373 www.analog.com
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