Datasheet HMC455LP3, 455LP3E (Analog Devices) - 4
| Fabricante | Analog Devices |
| Descripción | InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz |
| Páginas / Página | 6 / 4 — HMC455LP3 / 455LP3E. InGaP HBT ½ Watt High IP3. AMPLIFIER, 1.7 - 2.5 GHz. … |
| Formato / tamaño de archivo | PDF / 376 Kb |
| Idioma del documento | Inglés |
HMC455LP3 / 455LP3E. InGaP HBT ½ Watt High IP3. AMPLIFIER, 1.7 - 2.5 GHz. ACPR vs. Supply Voltage @ 1.96 GHz
Línea de modelo para esta hoja de datos
Versión de texto del documento
HMC455LP3 / 455LP3E
v02.0605
InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz ACPR vs. Supply Voltage @ 1.96 GHz ACPR vs. Supply Voltage @ 2.14 GHz CDMA 2000, 9 Channels Forward W-CDMA, 64 DPCH
-40 -30 -35 -45 CDMA2000 Rev. 8 Frequency: 1.96 GHz WCDMA Integration BW: 1.228 MHz -40 Frequency : 2.14 GHz Forward Link, SR1, 9 Channels Integration BW: 3.84 MHz 4.5V 5V 4.5V -50 64 DPCH -45 5.5V 5V -50 5.5V -55 ACPR (dBc) ACPR (dBc) -55 11 -60 -60 Source ACPR Source ACPR -65 -65 T 5 7 9 11 13 15 17 19 21 5 7 9 11 13 15 17 19 21 Channel Output Power (dBm) Channel Output Power (dBm) - SM
Absolute Maximum Ratings
S Collector Bias Voltage (Vcc) +6.0 Vdc ELECTROSTATIC SENSITIVE DEVICE R RF Input Power (RFIN)(Vs = +5Vdc) +25 dBm OBSERVE HANDLING PRECAUTIONS IE Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) IF 1.04 W (derate 16 mW/°C above 85 °C)
Application Circuit
L Thermal Resistance P 63 °C/W (junction to ground paddle) M Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C R A E W O & P R A E IN L Recommended Component Values TL1 TL2 TL3 TL4 L1 8.2 nH Impedance 50 Ohm 50 Ohm 50 Ohm 50 Ohm C1 2.2 µF Physical Length 0.33” 0.18” 0.13” 0.04” C2, C3 3.0 pF Electrical Length 34° 19° 13.5° 4° C4 0.9 pF PCB Material: 10 mil Rogers 4350, Er = 3.48 C5 100 pF Data shown is tuned for 1.85 - 2.2 GHz, contact HMC Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits. Information furnish F e o d r pri by An ce, de alog Devic leis vie s rbyeli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. : 978 Pho - n 25 e: 7 0- 81 33 2 4 9- 3 F 470 ax: 978 0 • Order o - n 25 lin 0 e a-t 3373 www.analog.com
11 - 237
Order On- Trademarks and registered trademarks are the property of their respective owners. line at www.hi A tptipte.co licatio m n Support: Phone: 1-800-ANALOG-D
v02.0605
InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz ACPR vs. Supply Voltage @ 1.96 GHz ACPR vs. Supply Voltage @ 2.14 GHz CDMA 2000, 9 Channels Forward W-CDMA, 64 DPCH
-40 -30 -35 -45 CDMA2000 Rev. 8 Frequency: 1.96 GHz WCDMA Integration BW: 1.228 MHz -40 Frequency : 2.14 GHz Forward Link, SR1, 9 Channels Integration BW: 3.84 MHz 4.5V 5V 4.5V -50 64 DPCH -45 5.5V 5V -50 5.5V -55 ACPR (dBc) ACPR (dBc) -55 11 -60 -60 Source ACPR Source ACPR -65 -65 T 5 7 9 11 13 15 17 19 21 5 7 9 11 13 15 17 19 21 Channel Output Power (dBm) Channel Output Power (dBm) - SM
Absolute Maximum Ratings
S Collector Bias Voltage (Vcc) +6.0 Vdc ELECTROSTATIC SENSITIVE DEVICE R RF Input Power (RFIN)(Vs = +5Vdc) +25 dBm OBSERVE HANDLING PRECAUTIONS IE Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) IF 1.04 W (derate 16 mW/°C above 85 °C)
Application Circuit
L Thermal Resistance P 63 °C/W (junction to ground paddle) M Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C R A E W O & P R A E IN L Recommended Component Values TL1 TL2 TL3 TL4 L1 8.2 nH Impedance 50 Ohm 50 Ohm 50 Ohm 50 Ohm C1 2.2 µF Physical Length 0.33” 0.18” 0.13” 0.04” C2, C3 3.0 pF Electrical Length 34° 19° 13.5° 4° C4 0.9 pF PCB Material: 10 mil Rogers 4350, Er = 3.48 C5 100 pF Data shown is tuned for 1.85 - 2.2 GHz, contact HMC Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits. Information furnish F e o d r pri by An ce, de alog Devic leis vie s rbyeli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. : 978 Pho - n 25 e: 7 0- 81 33 2 4 9- 3 F 470 ax: 978 0 • Order o - n 25 lin 0 e a-t 3373 www.analog.com
11 - 237
Order On- Trademarks and registered trademarks are the property of their respective owners. line at www.hi A tptipte.co licatio m n Support: Phone: 1-800-ANALOG-D