Datasheet HMC452QS16G, 452QS16GE (Analog Devices)

HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Typical Applications Features
The HMC452QS16G / HMC452QS16GE is ideal for Output IP3: +48 dBm applications requiring a high dynamic range amplifi er: 22.5 dB Gain @ 400 MHz • GSM, GPRS & EDGE 9 dB Gain @ 2100 MHz • CDMA & W-CDMA 53% PAE @ +31 dBm Pout • CATV/Cable Modem 11 +24 dBm CDMA2000 Channel Power@ -45 dBc ACP • Fixed Wireless & WLL Single +5V Supply Integrated Power Control (VPD) T QSOP16G SMT Package: 29.4 mm2
Functional Diagram General Description
- SM The HMC452QS16G & HMC452QS16GE are high S dynamic range GaAs InGaP Heterojunction Bipolar R Transistor (HBT) 1 watt MMIC power amplifi ers operating between 0.4 and 2.2 GHz. Packaged in a IE miniature 16 lead QSOP plastic package, the amp- IF lifi er gain is typically 22.5 dB at 0.4 GHz and 9 dB L at 2.1 GHz. Utilizing a minimum number of external P components and a single +5V supply, the amplifi er M output IP3 can be optimized to +43 dBm at 0.4 GHz or +48 dBm at 2.1 GHz. The power control (VPD) R A can be used for full power down or RF output power/ E current control. The high output IP3 and PAE make the HMC452QS16G(E)ideal power amplifi ers for W Cellular/PCS/3G, WLL, ISM and Fixed Wireless O applications.
Electrical Specifi cations, T = +25°C, Vs= +5V, VPD = +5V [1] A
& P Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units R A Frequency Range 400 - 410 450 - 496 810 - 960 1710 - 1990 2010 - 2170 MHz E Gain 20 22.5 19 21.5 13 15.5 7.5 10 6.5 9 dB Gain Variation Over IN 0.012 0.02 0.012 0.02 0.012 0.02 0.012 0.02 0.012 0.02 dB/C Temperature L Input Return Loss 13 15 9 17 11 dB Output Return Loss 7 8 12 15 20 dB Output Power for 1dB 27.5 30.5 27.5 30.5 27 30 28 31 28 31 dBm Compression (P1dB) Saturated Output 31 31 31 31.5 32.5 dBm Power (Psat) Output Third Order Intercept (IP3) [2] 40 43 41 44 45 48 45 48 45 48 dBm Noise Figure 7 7 7 7 7.5 dB Supply Current (Icq) 485 485 485 485 485 mA Control Current (IPD) 10 10 10 10 10 mA [1] Specifi cations and data refl ect HMC452QS16G measured using the respective application circuits for each designated frequency band found herein. Contact the HMC Applications Group for assistance in optimizing performance for your application. [2] Two-tone input power of -10 dBm per tone, 1 MHz spacing. Information furnish F e o d r pri by An ce, de alog Devic leis vie s rbyeli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. : 978 Phon -e25 : 7 0 81 -3 3 3 29 4 - 3 F 470 ax 0 • O : 978 rder o - nl 25 in 0 e a - t 33 ww 73
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