Datasheet HMC457QS16G, 457QS16GE (Analog Devices) - 7

FabricanteAnalog Devices
DescripciónInGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz
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HMC457QS16G / 457QS16GE. InGaP HBT 1 WATT POWER. AMPLIFIER, 1.7 - 2.2 GHz. Outline Drawing. Package Information. 11 - 246

HMC457QS16G / 457QS16GE InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Outline Drawing Package Information 11 - 246

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HMC457QS16G / 457QS16GE
v03.0907
InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Outline Drawing
11 T - SM S R IE NOTES: IF 1. LEADFRAME MATERIAL: COPPER ALLOY L 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] P 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. M 5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. R A E W O
Package Information
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3] & P [1] H457 R HMC457QS16G Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 XXXX A [2] H457 HMC457QS16GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 E XXXX [1] Max peak refl ow temperature of 235 °C IN [2] Max peak refl ow temperature of 260 °C L [3] 4-Digit lot number XXXX Information furnish F e o d r pri by An ce, de alog Devic leis vie s rby eli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No : 978 Phon -e25 : 7 0 81 - - 3 3 3 29 4 - 3 F 470 ax 0 • O : 978 rder o - nl 25 in 0 e a - t 33 ww 73
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