Datasheet HMC590 (Analog Devices) - 5
| Fabricante | Analog Devices |
| Descripción | GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6 - 10 GHz |
| Páginas / Página | 8 / 5 — HMC590. GaAs PHEMT MMIC 1 WATT. POWER AMPLIFIER, 6 - 10 GHz. Absolute … |
| Formato / tamaño de archivo | PDF / 407 Kb |
| Idioma del documento | Inglés |
HMC590. GaAs PHEMT MMIC 1 WATT. POWER AMPLIFIER, 6 - 10 GHz. Absolute Maximum Ratings. Typical Supply Current vs. Vdd
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HMC590
v02.0109
GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6 - 10 GHz Absolute Maximum Ratings Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd) +8 Vdc Vdd (V) Idd (mA) Gate Bias Voltage (Vgg) -2.0 to 0 Vdc +6.5 824 RF Input Power (RFIN)(Vdd = +7.0 Vdc) +12 dBm +7.0 820 3 Channel Temperature 175 °C +7.5 815 Continuous Pdiss (T= 85 °C) Note: Amplifi er will operate over full voltage ranges shown 6.0 W (derate 67 mW/°C above 85 °C) above Vgg adjusted to achieve Idd = 820 mA at +7.0V Thermal Resistance IP 14.9 °C/W (channel to die bottom) H Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS S - C R IE IF
Outline Drawing
L P M R A E W O R & P A E IN L NOTES:
Die Packaging Information
[1] 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” Standard Alternate 3. TYPICAL BOND PAD IS .004” SQUARE GP-1 (Gel Pack) [2] 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD [1] Refer to the “Packaging Information” section for die 6. BACKSIDE METAL IS GROUND. packaging dimensions. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. [2] For alternate packaging information contact Hittite 8. OVERALL DIE SIZE ± .002 Microwave Corporation. Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
3 - 74
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D
v02.0109
GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6 - 10 GHz Absolute Maximum Ratings Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd) +8 Vdc Vdd (V) Idd (mA) Gate Bias Voltage (Vgg) -2.0 to 0 Vdc +6.5 824 RF Input Power (RFIN)(Vdd = +7.0 Vdc) +12 dBm +7.0 820 3 Channel Temperature 175 °C +7.5 815 Continuous Pdiss (T= 85 °C) Note: Amplifi er will operate over full voltage ranges shown 6.0 W (derate 67 mW/°C above 85 °C) above Vgg adjusted to achieve Idd = 820 mA at +7.0V Thermal Resistance IP 14.9 °C/W (channel to die bottom) H Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS S - C R IE IF
Outline Drawing
L P M R A E W O R & P A E IN L NOTES:
Die Packaging Information
[1] 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” Standard Alternate 3. TYPICAL BOND PAD IS .004” SQUARE GP-1 (Gel Pack) [2] 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD [1] Refer to the “Packaging Information” section for die 6. BACKSIDE METAL IS GROUND. packaging dimensions. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. [2] For alternate packaging information contact Hittite 8. OVERALL DIE SIZE ± .002 Microwave Corporation. Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
3 - 74
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D