Datasheet HMC591 (Analog Devices) - 4
| Fabricante | Analog Devices |
| Descripción | GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6 - 10 GHz |
| Páginas / Página | 8 / 4 — HMC591. GaAs PHEMT MMIC 2 WATT. POWER AMPLIFIER, 6 - 10 GHz. Gain & … |
| Formato / tamaño de archivo | PDF / 418 Kb |
| Idioma del documento | Inglés |
HMC591. GaAs PHEMT MMIC 2 WATT. POWER AMPLIFIER, 6 - 10 GHz. Gain & Power vs. Supply Voltage @ 8 GHz
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HMC591
v02.0109
GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6 - 10 GHz Gain & Power vs. Supply Voltage @ 8 GHz Gain & Power vs. Supply Current @ 8 GHz
38 38 34 34 GAIN GAIN 30 P1dB 30 P1dB 3 Psat Psat (dBm), Psat(dBm) (dBm), Psat(dBm) 26 26 IP 22 22 H GAIN (dB), P1dB GAIN (dB), P1dB 18 18 6.5 7 7.5 940 1140 1340 Vdd SUPPLY VOLTAGE (V) Idd SUPPLY CURRENT (mA) S - C R
Reverse Isolation
IE
vs. Temperature, 7V @ 1340 mA Power Dissipation
IF 0 10 L P -10 9 M -20 +25C +85C -30 -40C 8 6GHz 7GHz R A -40 8GHz 9GHz E -50 7 10GHz ISOLATION (dB) W -60 POWER DISSIPATION (W) 6 O -70 -80 5 6 6.5 7 7.5 8 8.5 9 9.5 10 -14 -10 -6 -2 2 6 10 14 FREQUENCY (GHz) INPUT POWER (dBm) R & P A E
Absolute Maximum Ratings Typical Supply Current vs. Vdd
IN L Drain Bias Voltage (Vdd) +8 Vdc Vdd (V) Idd (mA) Gate Bias Voltage (Vgg) -2 to 0 Vdc +6.5 1355 RF Input Power (RFIN)(Vdd = +7.0 Vdc) +15 dBm +7.0 1340 Channel Temperature 175 °C +7.5 1325 Continuous Pdiss (T= 85 °C) Note: Amplifi er will operate over full voltage ranges shown 10.59 W (derate 117.6 mW/°C above 85 °C) above Vgg adjusted to achieve Idd = 1340 mA at +7.0V Thermal Resistance 8.5 °C/W (channel to die bottom) Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Information furnish F e o d r pri by An ce, de alog Devic leis vie s rby eli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No : 978 Phon -e25 : 7 0 81 - - 3 3 3 29 4 - 3 F 470 ax 0 • O : 978 rder o - nl 25 in 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com
3 - 81
Order On- Trademarks and registered trademarks are the property of their respective owners. line at www.hi A tptipte.co licatio m n Support: Phone: 1-800-ANALOG-D
v02.0109
GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6 - 10 GHz Gain & Power vs. Supply Voltage @ 8 GHz Gain & Power vs. Supply Current @ 8 GHz
38 38 34 34 GAIN GAIN 30 P1dB 30 P1dB 3 Psat Psat (dBm), Psat(dBm) (dBm), Psat(dBm) 26 26 IP 22 22 H GAIN (dB), P1dB GAIN (dB), P1dB 18 18 6.5 7 7.5 940 1140 1340 Vdd SUPPLY VOLTAGE (V) Idd SUPPLY CURRENT (mA) S - C R
Reverse Isolation
IE
vs. Temperature, 7V @ 1340 mA Power Dissipation
IF 0 10 L P -10 9 M -20 +25C +85C -30 -40C 8 6GHz 7GHz R A -40 8GHz 9GHz E -50 7 10GHz ISOLATION (dB) W -60 POWER DISSIPATION (W) 6 O -70 -80 5 6 6.5 7 7.5 8 8.5 9 9.5 10 -14 -10 -6 -2 2 6 10 14 FREQUENCY (GHz) INPUT POWER (dBm) R & P A E
Absolute Maximum Ratings Typical Supply Current vs. Vdd
IN L Drain Bias Voltage (Vdd) +8 Vdc Vdd (V) Idd (mA) Gate Bias Voltage (Vgg) -2 to 0 Vdc +6.5 1355 RF Input Power (RFIN)(Vdd = +7.0 Vdc) +15 dBm +7.0 1340 Channel Temperature 175 °C +7.5 1325 Continuous Pdiss (T= 85 °C) Note: Amplifi er will operate over full voltage ranges shown 10.59 W (derate 117.6 mW/°C above 85 °C) above Vgg adjusted to achieve Idd = 1340 mA at +7.0V Thermal Resistance 8.5 °C/W (channel to die bottom) Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Information furnish F e o d r pri by An ce, de alog Devic leis vie s rby eli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No : 978 Phon -e25 : 7 0 81 - - 3 3 3 29 4 - 3 F 470 ax 0 • O : 978 rder o - nl 25 in 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com
3 - 81
Order On- Trademarks and registered trademarks are the property of their respective owners. line at www.hi A tptipte.co licatio m n Support: Phone: 1-800-ANALOG-D