Datasheet HMC659LC5 (Analog Devices) - 4
| Fabricante | Analog Devices |
| Descripción | GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz |
| Páginas / Página | 8 / 4 — HMC659LC5. GaAs PHEMT MMIC. POWER AMPLIFIER, DC - 15 GHz. Power … |
| Formato / tamaño de archivo | PDF / 482 Kb |
| Idioma del documento | Inglés |
HMC659LC5. GaAs PHEMT MMIC. POWER AMPLIFIER, DC - 15 GHz. Power Compression @ 2 GHz. Power Compression @ 7 GHz
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HMC659LC5
v04.0614
GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz Power Compression @ 2 GHz Power Compression @ 7 GHz
32 32 28 (%) 28 (%) T 24 PAE 24 PAE 20 20 M (dB), (dB), 16 16 GAIN GAIN 12 12 (dBm), 8 (dBm), 8 S - S Pout 4 Pout 4 R 0 0 IE 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 INPUT POWER (dBm) INPUT POWER (dBm) LIF Pout Gain PAE Pout Gain PAE P M
Power Compression @ 15 GHz Power Dissipation
R A 32 5 E 28 (%) 4 W 24 (W) PAE O 20 (dB), 3 16 GAIN DISSIPATION 12 2 (dBm), 8 R & P POWER 1 Pout 4 A E 0 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 -10 -5 0 5 10 15 INPUT POWER (dBm) INPUT POWER (dBm) LIN Pout Gain PAE Max Pdis @ 85C 2 GHz 12 GHz
Absolute Maximum Ratings Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd) 9 Vdc Vdd (V) Idd (mA) Gate Bias Voltage (Vgg1) -2 to 0 Vdc 7.5 299 Gate Bias Voltage (Vgg2) +2V to +4V 8.0 300 RF Input Power (RFIN)(Vdd = +8 Vdc) +20 dBm 8.5 301 Channel Temperature 175 °C Continuous Pdiss (T= 85 °C) 3.3 W (derate 37 mW/°C above 85 °C) ELECTROSTATIC SENSITIVE DEVICE Thermal Resistance 27.3 °C/W OBSERVE HANDLING PRECAUTIONS (channel to ground paddle) Storage Temperature -65 to 150 °C Operating Temperature -40 to 85 °C ESD Sensitivity (HBM) Class 1A I F nf o or r p mati r o in cfe ur , d nish e e l d iv b e y r A y a nalo n g d t Devi o p ces i la s c bele o ieve rd d t e o rbs e : H acc iutrtatite e M and ic reli rao bl w e. a H v o e C wever o , nrp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No rd Phoe n r O e: 7 n- 81-li 3 n 2 e a 9-4 t w 70 ww 0 • O . rdh e itt r o it nle i . n co e a m license is granted by implication or otherwise under any patent or patent rights of Analog Devices. t www.analog.com
4
Application Support: Pho Trademarks and registered trademarks are the property of their respective owners.ne: 978-250-33A4 p 3 p o lic ra a tiopp n S su@ p h po irtttit : Pe. hocnom e: 1-800-ANALOG-D
v04.0614
GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz Power Compression @ 2 GHz Power Compression @ 7 GHz
32 32 28 (%) 28 (%) T 24 PAE 24 PAE 20 20 M (dB), (dB), 16 16 GAIN GAIN 12 12 (dBm), 8 (dBm), 8 S - S Pout 4 Pout 4 R 0 0 IE 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 INPUT POWER (dBm) INPUT POWER (dBm) LIF Pout Gain PAE Pout Gain PAE P M
Power Compression @ 15 GHz Power Dissipation
R A 32 5 E 28 (%) 4 W 24 (W) PAE O 20 (dB), 3 16 GAIN DISSIPATION 12 2 (dBm), 8 R & P POWER 1 Pout 4 A E 0 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 -10 -5 0 5 10 15 INPUT POWER (dBm) INPUT POWER (dBm) LIN Pout Gain PAE Max Pdis @ 85C 2 GHz 12 GHz
Absolute Maximum Ratings Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd) 9 Vdc Vdd (V) Idd (mA) Gate Bias Voltage (Vgg1) -2 to 0 Vdc 7.5 299 Gate Bias Voltage (Vgg2) +2V to +4V 8.0 300 RF Input Power (RFIN)(Vdd = +8 Vdc) +20 dBm 8.5 301 Channel Temperature 175 °C Continuous Pdiss (T= 85 °C) 3.3 W (derate 37 mW/°C above 85 °C) ELECTROSTATIC SENSITIVE DEVICE Thermal Resistance 27.3 °C/W OBSERVE HANDLING PRECAUTIONS (channel to ground paddle) Storage Temperature -65 to 150 °C Operating Temperature -40 to 85 °C ESD Sensitivity (HBM) Class 1A I F nf o or r p mati r o in cfe ur , d nish e e l d iv b e y r A y a nalo n g d t Devi o p ces i la s c bele o ieve rd d t e o rbs e : H acc iutrtatite e M and ic reli rao bl w e. a H v o e C wever o , nrp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No rd Phoe n r O e: 7 n- 81-li 3 n 2 e a 9-4 t w 70 ww 0 • O . rdh e itt r o it nle i . n co e a m license is granted by implication or otherwise under any patent or patent rights of Analog Devices. t www.analog.com
4
Application Support: Pho Trademarks and registered trademarks are the property of their respective owners.ne: 978-250-33A4 p 3 p o lic ra a tiopp n S su@ p h po irtttit : Pe. hocnom e: 1-800-ANALOG-D