Datasheet HMC-APH460 (Analog Devices) - 3

FabricanteAnalog Devices
DescripciónGaAs HEMT MMIC 0.5 WATT POWER AMPLIFIER, 27 - 31.5 GHz
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HMC-APH460. GaAs HEMT MMIC 0.5 WATT POWER. AMPLIFIER, 27 - 31.5 GHz. Absolute Maximum Ratings. Outline Drawing

HMC-APH460 GaAs HEMT MMIC 0.5 WATT POWER AMPLIFIER, 27 - 31.5 GHz Absolute Maximum Ratings Outline Drawing

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HMC-APH460
v02.0208
GaAs HEMT MMIC 0.5 WATT POWER AMPLIFIER, 27 - 31.5 GHz Absolute Maximum Ratings
Drain Bias Voltage +5.5 Vdc Gate Bias Voltage -1 to +0.3 Vdc ELECTROSTATIC SENSITIVE DEVICE RF Input Power 20 dBm OBSERVE HANDLING PRECAUTIONS 3 Thermal Resistance Channel 69.7 °C/W to Die Bottom Storage Temperature -65 °C to + 150 °C Die Bottom Temperature for IP 33 °C * MTTF of 106 Hours H Die Bottom Temperature for 63 °C * MTTF of 105 Hours * Maximum junction temperature for die bottom at 85 °C is simulated to be 232 °C. MTTF in this condition is estimated S - C to be 5 x 104 hrs. R IE
Outline Drawing
IF L P M R A E W O R & P A E IN L NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM].
Die Packaging Information
[1] 2. TYPICAL BOND PAD IS .004” SQUARE. Standard Alternate 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. GP-2 (Gel Pack) [2] 5. BOND PAD METALLIZATION: GOLD. [1] Refer to the “Packaging Information” section for die 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. packaging dimensions. 7. OVERALL DIE SIZE ±.002” [2] For alternate packaging information contact Hittite Microwave Corporation. Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
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