Datasheet HMC1086F10 (Analog Devices) - 7
| Fabricante | Analog Devices |
| Descripción | 25 WATT Flange Mount GaN MMIC POWER AMPLIFIER, 2 - 6 GHz |
| Páginas / Página | 12 / 7 — HMC1086F10. 25 WATT FlAnge MounT gAn MMIC. PoWeR AMPlIFIeR, 2 - 6 gHz. … |
| Formato / tamaño de archivo | PDF / 728 Kb |
| Idioma del documento | Inglés |
HMC1086F10. 25 WATT FlAnge MounT gAn MMIC. PoWeR AMPlIFIeR, 2 - 6 gHz. Absolute Maximum Ratings. Typical Supply Current vs. Vdd
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HMC1086F10
v06.1017
25 WATT FlAnge MounT gAn MMIC PoWeR AMPlIFIeR, 2 - 6 gHz Absolute Maximum Ratings Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd) +32 Vdc Vdd (V) idd (mA) T Gate Bias Voltage (Vgg) -8 to 0 Vdc +24 1100 m rf input power (rfin) +33 dBm +28 1100 s Channel Temperature 225 °C +32 1100 Adjust Vgg to achieve idd = 1100 mA maximum pdiss (T = 85 °C) r - 60.5w (derate 432 mw/°C above 85 °C) e Thermal resistance
Amplifier Turn-on Procedure:
w 2.31 °C/w (channel to flange bottom) 1.) set Vgg to -5V. o maximum forward 11 mA 2.) set Vdd to +28V. p Gate Current (mA) 3.) ramp gate voltage until quiescent drain current = maximum Vswr
[1]
6:1 1100 mA. storage Temperature -65 to 150 °C
[2]
4.) Apply rf input power. r & A operating Temperature -40 to 85 °C e [1] restricted by maximum power dissipation. [2] This device is not surface mountable and is not intended nor suitable to be
Amplifier Turn-off Procedure:
lin used in a solder reflow process. This device must not be exposed to ambient temperatures above +150°C. 1.) remove rf input power. 2.) set Vgg to -5V. s - 3.) set Vdd to 0V. r 4.) set Vgg to 0V. ie lif p m A eleCTrosTATiC sensiTiVe DeViCe oBserVe HAnDlinG preCAUTions For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
7
Application Support: Phone: 1-800-ANALOG-D Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Performance Characteristics Gain & Return Loss Gain vs. Temperature Input Return Loss vs. Temperature Output Return Loss vs. Temperature Low Frequency Gain & Return Loss Noise Figure vs. Frequency P1dB vs. Temperature Psat vs. Temperature P1dB vs. Vdd Psat vs. Vdd Output IP3 vs. Temperature @ Pout = 18 dBm Tone Power Compression @ 10 GHz Power Dissipation Second Harmonics vs. Temperature @ Pout = 18 dBm Second Harmonics vs. Vdd @ Pout = 18 dBm Second Harmonics vs. Pout Absolute Maximum Ratings Typical Supply Current vs. Vdd Outline Drawing Die Packaging Information Pad Descriptions Assembly Diagram Application Circuit
v06.1017
25 WATT FlAnge MounT gAn MMIC PoWeR AMPlIFIeR, 2 - 6 gHz Absolute Maximum Ratings Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd) +32 Vdc Vdd (V) idd (mA) T Gate Bias Voltage (Vgg) -8 to 0 Vdc +24 1100 m rf input power (rfin) +33 dBm +28 1100 s Channel Temperature 225 °C +32 1100 Adjust Vgg to achieve idd = 1100 mA maximum pdiss (T = 85 °C) r - 60.5w (derate 432 mw/°C above 85 °C) e Thermal resistance
Amplifier Turn-on Procedure:
w 2.31 °C/w (channel to flange bottom) 1.) set Vgg to -5V. o maximum forward 11 mA 2.) set Vdd to +28V. p Gate Current (mA) 3.) ramp gate voltage until quiescent drain current = maximum Vswr
[1]
6:1 1100 mA. storage Temperature -65 to 150 °C
[2]
4.) Apply rf input power. r & A operating Temperature -40 to 85 °C e [1] restricted by maximum power dissipation. [2] This device is not surface mountable and is not intended nor suitable to be
Amplifier Turn-off Procedure:
lin used in a solder reflow process. This device must not be exposed to ambient temperatures above +150°C. 1.) remove rf input power. 2.) set Vgg to -5V. s - 3.) set Vdd to 0V. r 4.) set Vgg to 0V. ie lif p m A eleCTrosTATiC sensiTiVe DeViCe oBserVe HAnDlinG preCAUTions For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
7
Application Support: Phone: 1-800-ANALOG-D Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Performance Characteristics Gain & Return Loss Gain vs. Temperature Input Return Loss vs. Temperature Output Return Loss vs. Temperature Low Frequency Gain & Return Loss Noise Figure vs. Frequency P1dB vs. Temperature Psat vs. Temperature P1dB vs. Vdd Psat vs. Vdd Output IP3 vs. Temperature @ Pout = 18 dBm Tone Power Compression @ 10 GHz Power Dissipation Second Harmonics vs. Temperature @ Pout = 18 dBm Second Harmonics vs. Vdd @ Pout = 18 dBm Second Harmonics vs. Pout Absolute Maximum Ratings Typical Supply Current vs. Vdd Outline Drawing Die Packaging Information Pad Descriptions Assembly Diagram Application Circuit