Datasheet HMC1087 (Analog Devices)

HMC1087
v05.1217
8 WATT GaN MMIC POWER AMPLIFIER, 2 - 20 GHz Typical Applications Features
The HMC1087 is ideal for: High Psat: +39 dBm IP • Test Instrumentation Power Gain at Psat: +5.5 dB H • General Communications High Output IP3: +44 dBm • Radar Small Signal Gain: 11 dB Supply Voltage: +28 V @ 850 mA R - C E 50 Ohm Matched Input/Output W Die Size: 2 x 4 x 0.1 mm O
Functional Diagram General Description
The HMC1087 is an 8W Gal ium Nitride (GaN) MMIC R & P Power Amplifier which operates between 2 and 20 A GHz. The amplifier typical y provides 11dB of small E signal gain, +39 dBm of saturated output power, and +44 dBm output IP3 at +29 dBm output power per tone. IN The HMC1087 draws 850 mA quiescent current from a +28V DC supply. The RF I/Os are matched to 50 Ohms for ease of integration into Multi-Chip-Modules S - L (MCMs). All electrical performance data was acquired R with the die eutectical y attached to 1.02 mm (40 mil) IE thick CuMo carrier with multiple 1.0 mil diameter ball bonds connecting the die to 50 Ohm transmission LIF lines on alumina. P M A
Electrical Specifications, Tc = +25°C, Vdd = +28 V, Idd = 850 mA
[1] Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range 2 - 6 6 - 18 18 - 20 GHz Small Signal Gain 10 11 10 12 10 12 dB Gain Flatness ±0.5 ±1.0 ±0.5 dB Gain Variation Over Temperature 0.012 0.016 0.024 dB/ °C Input Return Loss 8 8 15 dB Output Return Loss 10 12 12 dB Output Power for 3 dB Compression (P3dB) 38 38 38 dBm Power Gain for 3 dB compression (P3dB) 8.5 8.5 8 dB Saturated Output Power (Psat) 39 40 39 dBm Output Third Order Intercept (IP3) [2] 44 44 43.5 dBm Power Added Efficiency 24 22 20 % Quiescent Supply Current (Idd @ Vdd = 28V) 850 850 850 mA [1] Assumes eutectic attach of die to a 40mil CuMo carrier, and 25°C is maintained at the back of the carrie [2] Measurement taken at Pout / tone = +29 dBm Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
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rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D Document Outline Features General Description Functional Diagram Electrical Specifications Gain and Return Loss Gain vs. Temperature Input Return Loss vs. Temperature Output Return Loss vs. Temperature Gain vs. Bias Pout vs. Frequency Power Gain vs. Frequency Power Added Efficiency vs. Pin Pout vs. Pin P3dB vs. Temperature P3dB vs. DC Bias Psat vs. Temperature Psat vs. DC Bias IDS vs. Pin OIP3 vs. Frequency IM3 vs. Pout/Tone Reverse Isolation vs. Temperature Power Dissipation vs. Pin Second Harmonic Absolute Maximum Ratings[1] Outline Drawing Die Packaging Information Pad Descriptions Bookmark 28 Assembly Diagram Mounting & Bonding Techniques for GaN MMICs