Datasheet HMC7149 (Analog Devices) - 7
| Fabricante | Analog Devices |
| Descripción | 10 WATT GaN MMIC POWER AMPLIFIER, 6 - 18 GHz |
| Páginas / Página | 10 / 7 — HMC7149. 10 WATT GaN MMIC POWER AMPLIFIER,. 6 - 18 GHz. Absolute Maximum … |
| Formato / tamaño de archivo | PDF / 944 Kb |
| Idioma del documento | Inglés |
HMC7149. 10 WATT GaN MMIC POWER AMPLIFIER,. 6 - 18 GHz. Absolute Maximum Ratings[1]. Typical Supply Current vs. Vdd
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HMC7149
v
10 WATT GaN MMIC POWER AMPLIFIER, 6 - 18 GHz Absolute Maximum Ratings[1] Typical Supply Current vs. Vdd
IP Drain Bias Voltage (Vdd) +32V Vdd (V) Idd (mA) H Gate Bias Voltage (Vgg) -8V to +0V +28.0 680 Maximum Forward Gate Current 6 mA Maximum RF Input Power (RFIN) 30 dBm R - C Maximum Junction Temperature (Tj) 225 °C E Maximum Pdiss (T=85°C) 50 W W (Derate 357 mW/°C above 85°C) O Thermal Resistance [2] 2.8 °C/W Maximum VSWR [3] 6:1 Storage Temperature -55 to +150 °C ELECTROSTATIC SENSITIVE DEVICE Operating Temperature -40 to +85 °C OBSERVE HANDLING PRECAUTIONS R & P [1] Operation outside parameter ranges above can cause permanent damage to the device. These are maximum stress ratings A only. Continuous operation of the device at these conditions is not implied. E [2] Assumes 1mil AuSn die attach to a 40mil CuMo Carrier with 85°C at the back of the carrier. [3] Restricted by maximum power dissipation IN
Outline Drawing
S - L R IE LIF P M A
Die Packaging Information
NOTES:
[1]
1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” Standard Alternate 3. TYPICAL BOND PAD IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD GP-1 (Gel Pack) [2] 5. BOND PAD METALLIZATION: GOLD [1] Refer to the “Packaging Information” section for die 6. BACKSIDE METAL IS GROUND. packaging dimensions. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. [2] For alternate packaging information contact Hittite 8. OVERALL DIE SIZE ± .002 Microwave Corporation. FIo nf r p orm raiticoe n , d fur e nislihvee d rby a y A n n d t alog o p Devila ce cs e o is b rd eli e ev res d : A to n b a e lao ccg D urat e e v anic d eresli, I abl n e c . .H, 1 Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 owever, no For price, delivery, and to place orders: Analog Devices, In c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
7
Phone: 781-329-4700 • Order On-line at www.analog.com rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D
v
10 WATT GaN MMIC POWER AMPLIFIER, 6 - 18 GHz Absolute Maximum Ratings[1] Typical Supply Current vs. Vdd
IP Drain Bias Voltage (Vdd) +32V Vdd (V) Idd (mA) H Gate Bias Voltage (Vgg) -8V to +0V +28.0 680 Maximum Forward Gate Current 6 mA Maximum RF Input Power (RFIN) 30 dBm R - C Maximum Junction Temperature (Tj) 225 °C E Maximum Pdiss (T=85°C) 50 W W (Derate 357 mW/°C above 85°C) O Thermal Resistance [2] 2.8 °C/W Maximum VSWR [3] 6:1 Storage Temperature -55 to +150 °C ELECTROSTATIC SENSITIVE DEVICE Operating Temperature -40 to +85 °C OBSERVE HANDLING PRECAUTIONS R & P [1] Operation outside parameter ranges above can cause permanent damage to the device. These are maximum stress ratings A only. Continuous operation of the device at these conditions is not implied. E [2] Assumes 1mil AuSn die attach to a 40mil CuMo Carrier with 85°C at the back of the carrier. [3] Restricted by maximum power dissipation IN
Outline Drawing
S - L R IE LIF P M A
Die Packaging Information
NOTES:
[1]
1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” Standard Alternate 3. TYPICAL BOND PAD IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD GP-1 (Gel Pack) [2] 5. BOND PAD METALLIZATION: GOLD [1] Refer to the “Packaging Information” section for die 6. BACKSIDE METAL IS GROUND. packaging dimensions. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. [2] For alternate packaging information contact Hittite 8. OVERALL DIE SIZE ± .002 Microwave Corporation. FIo nf r p orm raiticoe n , d fur e nislihvee d rby a y A n n d t alog o p Devila ce cs e o is b rd eli e ev res d : A to n b a e lao ccg D urat e e v anic d eresli, I abl n e c . .H, 1 Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 owever, no For price, delivery, and to place orders: Analog Devices, In c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
7
Phone: 781-329-4700 • Order On-line at www.analog.com rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D