Datasheet HMC7441 (Analog Devices) - 6
| Fabricante | Analog Devices |
| Descripción | GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.5 - 31 GHz |
| Páginas / Página | 10 / 6 — HMC7441. GaAs pHEMT MMIC 2 WATT. POWER AMPLIFIER, 27.5 - 31 GHz. Absolute … |
| Formato / tamaño de archivo | PDF / 558 Kb |
| Idioma del documento | Inglés |
HMC7441. GaAs pHEMT MMIC 2 WATT. POWER AMPLIFIER, 27.5 - 31 GHz. Absolute Maximum Ratings. Outline Drawing
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HMC7441
v00.0913
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.5 - 31 GHz Absolute Maximum Ratings
Drain Bias Voltage (Vdd) +6.5V RF Input Power (RFIN) +24 dBm Channel Temperature 175 °C IP ELECTROSTATIC SENSITIVE DEVICE Continuous Pdiss (T= 85 °C) H 10.5 W (derate 125 mW/°C above 85°C) OBSERVE HANDLING PRECAUTIONS Thermal Resistance 8 °C/W (channel to die bottom) R - C Storage Temperature -65 to +150 °C E Operating Temperature -55 to +85 °C ESD Sensitivity (HBM) Class 1A, Passed 250V W O
Outline Drawing
R & P A E IN S - L R IE LIF P M A NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]
Die Packaging Information
[1] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND PAD IS 0.0026” [0.066] SQUARE Standard Alternate 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD GP-1 (Gel Pack) [2] 6. BACKSIDE METAL IS GROUND. [1] Refer to the “Packaging Information” section for die 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. OVERALL DIE SIZE ± .002 packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd hone e r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o t niltie n .c e ao t m license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com
6
Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 o plica r a tio p n S p u s p @ po h rt itt : P ite ho . n c e o : 1m -800-ANALOG-D
v00.0913
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.5 - 31 GHz Absolute Maximum Ratings
Drain Bias Voltage (Vdd) +6.5V RF Input Power (RFIN) +24 dBm Channel Temperature 175 °C IP ELECTROSTATIC SENSITIVE DEVICE Continuous Pdiss (T= 85 °C) H 10.5 W (derate 125 mW/°C above 85°C) OBSERVE HANDLING PRECAUTIONS Thermal Resistance 8 °C/W (channel to die bottom) R - C Storage Temperature -65 to +150 °C E Operating Temperature -55 to +85 °C ESD Sensitivity (HBM) Class 1A, Passed 250V W O
Outline Drawing
R & P A E IN S - L R IE LIF P M A NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]
Die Packaging Information
[1] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND PAD IS 0.0026” [0.066] SQUARE Standard Alternate 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD GP-1 (Gel Pack) [2] 6. BACKSIDE METAL IS GROUND. [1] Refer to the “Packaging Information” section for die 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. OVERALL DIE SIZE ± .002 packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd hone e r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o t niltie n .c e ao t m license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com
6
Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 o plica r a tio p n S p u s p @ po h rt itt : P ite ho . n c e o : 1m -800-ANALOG-D