Datasheet HMC637ASCPZ-EP (Analog Devices)
Fabricante | Analog Devices |
Descripción | GaAs, pHEMT, MMIC, 1 W Power Amplifier, 0.1 GHz to 6 GHz |
Páginas / Página | 9 / 1 — GaAs, pHEMT, MMIC,. 1 W Power Amplifier, 0.1 GHz to 6 GHz. Enhanced … |
Formato / tamaño de archivo | PDF / 240 Kb |
Idioma del documento | Inglés |
GaAs, pHEMT, MMIC,. 1 W Power Amplifier, 0.1 GHz to 6 GHz. Enhanced Product. HMC637ASCPZ-EP. FEATURES. FUNCTIONAL BLOCK DIAGRAM
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GaAs, pHEMT, MMIC, 1 W Power Amplifier, 0.1 GHz to 6 GHz Enhanced Product HMC637ASCPZ-EP FEATURES FUNCTIONAL BLOCK DIAGRAM P1dB output power: 29 dBm typical 1 2 C C C C C C Gain: 13 dB typical NI NI ACG ACG NI NI NI NI OIP3: 44 dBm typical 32 31 30 29 28 27 26 25 50 Ω matched input/output NIC 1 HMC637ASCPZ-EP 24 NIC 32-lead, 5 mm × 5 mm LFCSP package: 25 mm2 VGG2 2 23 NIC NIC 3 22 GND ENHANCED PRODUCT FEATURES GND 4 21 RFOUT/VDD RFIN 5 20 NIC Supports defense and aerospace applications NIC 6 19 NIC NIC 7 18 NIC (AQEC standard) NIC 8 17 NIC Extended industrial temperature range (−55°C to +105°C) Controlled manufacturing baseline 9 10 11 12 13 14 15 16 C C C C 4 3 1 assembly/test site NI ND NI NI G GG1 NI V ACG ACG
001
1 fabrication site NIC = NO INTERNAL CONNECTION
20371-
Product change notification
Figure 1.
Qualification data available on request APPLICATIONS Telecom infrastructure Microwave radio Very small aperture terminal (VSAT) Military and space Test instrumentation Fiber optics GENERAL DESCRIPTION
The HMC637ASCPZ-EP is a gal ium arsenide (GaAs), monolithic equipment applications. The HMC637ASCPZ-EP amplifier radio microwave integrated circuit (MMIC), pseudomorphic high frequency (RF) inputs/outputs (I/Os) are internally matched electron mobility transistor (pHEMT), distributed power to 50 Ω, and the 5 mm × 5 mm lead frame chip scale package amplifier that operates between 0.1 GHz and 6 GHz. The (LFCSP) is compatible with high volume surface-mount amplifier provides 13 dB of gain, 44 dBm output third-order technology (SMT) assembly equipment. intercept (OIP3), and 29 dBm of output power at 1 dB gain Additional application and technical information can be found compression (P1dB) while requiring 400 mA from a 12.0 V in the HMC637ALP5E data sheet. supply. Gain flatness is ±0.75 dB from 0.1 GHz to 6 GHz, making the HMC637ASCPZ-EP ideal for electronic warfare (EW), electronic counter-measure (ECM), radar and test
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Document Outline FEATURES ENHANCED PRODUCT FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE POWER DERATING CURVES ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS OUTLINE DIMENSIONS ORDERING GUIDE