Datasheet HMC7229 (Analog Devices) - 3
| Fabricante | Analog Devices |
| Descripción | 33 GHz to 40 GHz, GaAs, pHEMT, MMIC, 1 W Power Amplifier with Power Detector |
| Páginas / Página | 16 / 3 — Data Sheet. HMC7229. SPECIFICATIONS 33 GHz TO 35 GHz FREQUENCY RANGE. … |
| Revisión | D |
| Formato / tamaño de archivo | PDF / 310 Kb |
| Idioma del documento | Inglés |
Data Sheet. HMC7229. SPECIFICATIONS 33 GHz TO 35 GHz FREQUENCY RANGE. Table 1. Parameter. Symbol. Test Conditions/Comments. Min. Typ
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Data Sheet HMC7229 SPECIFICATIONS 33 GHz TO 35 GHz FREQUENCY RANGE
TA = 25°C, VDD = VDD1 = VDD2 = VDD3 = VDD4 = VDD5 = VDD6 = VDD7 = VDD8 = 6 V, IDQ = 1200 mA.1, 2
Table 1. Parameter Symbol Test Conditions/Comments Min Typ Max Unit
FREQUENCY RANGE 33 35 GHz GAIN 21 23 dB Gain Variation over Temperature 0.035 dB/°C RETURN LOSS Input 7 dB Output 15 dB OUTPUT Output Power for 1 dB Compression P1dB 29.5 31.5 dBm Saturated Output Power PSAT 32 dBm Power Added Efficiency PAE PAE taken at saturated output power 22 % Output Third-Order Intercept OIP3 Measurement taken at POUT/tone = 20 dBm 39.5 dBm SUPPLY CURRENT I 3 DQ 800 1200 mA SUPPLY VOLTAGE VDD 5 6 V 1 Recommended bias conditions. 2 Adjust the VGGx supply voltage between −2 V and 0 V to achieve IDQ = 1200 mA. 3 IDQ is the drain current without applying RF power.
35 GHz TO 37 GHz FREQUENCY RANGE
TA = 25°C, VDD = VDD1 = VDD2 = VDD3 = VDD4 = VDD5 = VDD6 = VDD7 = VDD8 = 6 V, IDQ = 1200 mA.1, 2
Table 2. Parameter Symbol Test Conditions/Comments Min Typ Max Unit
FREQUENCY RANGE 35 37 GHz GAIN 22.5 24.5 dB Gain Variation over Temperature 0.044 dB/°C RETURN LOSS Input 9.5 dB Output 20 dB OUTPUT Output Power for 1 dB Compression P1dB 28.5 30.5 dBm Saturated Output Power PSAT 31 dBm Power Added Efficiency PAE PAE taken at saturated output power 16 % Output Third-Order Intercept OIP3 Measurement taken at POUT/tone = 20 dBm 39 dBm SUPPLY CURRENT I 3 DQ 800 1200 mA SUPPLY VOLTAGE VDD 5 6 V 1 Recommended bias conditions. 2Adjust the VGGx supply voltage between −2 V and 0 V to achieve IDQ = 1200 mA. 3 IDQ is the drain current without applying RF power. Rev. D | Page 3 of 16 Document Outline Features Applications General Description Functional Block Diagram Table of Contents Revision History Specifications 33 GHz to 35 GHz Frequency Range 35 GHz to 37 GHz Frequency Range 37 GHz to 40 GHz Frequency Range Absolute Maximum Ratings ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Theory of Operation Applications Information Biasing Procedures Typical Application Circuit Mounting and Bonding Techniques for Millimeter Wave GaAs MMICs Handling Precautions Mounting Eutectic Die Attach Epoxy Die Attach Wire Bonding Assembly Diagram Outline Dimensions Ordering Guide
TA = 25°C, VDD = VDD1 = VDD2 = VDD3 = VDD4 = VDD5 = VDD6 = VDD7 = VDD8 = 6 V, IDQ = 1200 mA.1, 2
Table 1. Parameter Symbol Test Conditions/Comments Min Typ Max Unit
FREQUENCY RANGE 33 35 GHz GAIN 21 23 dB Gain Variation over Temperature 0.035 dB/°C RETURN LOSS Input 7 dB Output 15 dB OUTPUT Output Power for 1 dB Compression P1dB 29.5 31.5 dBm Saturated Output Power PSAT 32 dBm Power Added Efficiency PAE PAE taken at saturated output power 22 % Output Third-Order Intercept OIP3 Measurement taken at POUT/tone = 20 dBm 39.5 dBm SUPPLY CURRENT I 3 DQ 800 1200 mA SUPPLY VOLTAGE VDD 5 6 V 1 Recommended bias conditions. 2 Adjust the VGGx supply voltage between −2 V and 0 V to achieve IDQ = 1200 mA. 3 IDQ is the drain current without applying RF power.
35 GHz TO 37 GHz FREQUENCY RANGE
TA = 25°C, VDD = VDD1 = VDD2 = VDD3 = VDD4 = VDD5 = VDD6 = VDD7 = VDD8 = 6 V, IDQ = 1200 mA.1, 2
Table 2. Parameter Symbol Test Conditions/Comments Min Typ Max Unit
FREQUENCY RANGE 35 37 GHz GAIN 22.5 24.5 dB Gain Variation over Temperature 0.044 dB/°C RETURN LOSS Input 9.5 dB Output 20 dB OUTPUT Output Power for 1 dB Compression P1dB 28.5 30.5 dBm Saturated Output Power PSAT 31 dBm Power Added Efficiency PAE PAE taken at saturated output power 16 % Output Third-Order Intercept OIP3 Measurement taken at POUT/tone = 20 dBm 39 dBm SUPPLY CURRENT I 3 DQ 800 1200 mA SUPPLY VOLTAGE VDD 5 6 V 1 Recommended bias conditions. 2Adjust the VGGx supply voltage between −2 V and 0 V to achieve IDQ = 1200 mA. 3 IDQ is the drain current without applying RF power. Rev. D | Page 3 of 16 Document Outline Features Applications General Description Functional Block Diagram Table of Contents Revision History Specifications 33 GHz to 35 GHz Frequency Range 35 GHz to 37 GHz Frequency Range 37 GHz to 40 GHz Frequency Range Absolute Maximum Ratings ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Theory of Operation Applications Information Biasing Procedures Typical Application Circuit Mounting and Bonding Techniques for Millimeter Wave GaAs MMICs Handling Precautions Mounting Eutectic Die Attach Epoxy Die Attach Wire Bonding Assembly Diagram Outline Dimensions Ordering Guide