Datasheet HMC906A (Analog Devices) - 4
| Fabricante | Analog Devices |
| Descripción | GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz |
| Páginas / Página | 12 / 4 — HMC906A. GaAs pHEMT MMIC 2 WATT. POWER AMPLIFIER, 27.3 - 33.5 GHz. Psat … |
| Formato / tamaño de archivo | PDF / 601 Kb |
| Idioma del documento | Inglés |
HMC906A. GaAs pHEMT MMIC 2 WATT. POWER AMPLIFIER, 27.3 - 33.5 GHz. Psat vs. Idd. Power Compression @ 30 GHz
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HMC906A
v02.0617
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz Psat vs. Idd Power Compression @ 30 GHz
38 36 2300 36 ) 30 2100 % 34 ip ) 24 1900 , PAE( m 32 B) I H (d dd (dB N at 18 1700 (m s 30 AI P A ) ), G 12 1500 28 Bm t(d u r - C 26 6 1300 Po e 24 0 1100 27 28 29 30 31 32 33 34 w -8 -6 -4 -2 0 2 4 6 8 10 12 FREQUENCY (GHz) INPUT POWER (dBm) o 1100mA 1200mA 1300mA Pout Gain PAE p Idd r &
Gain and Power vs. Idd @ 30 GHz Gain and Power vs. Vdd @ 30 GHz
A 40 40 e ) 38 m 38 m 36 (dB 36 (dB at s at lin 34 s 34 ), P ), P m 32 m 32 (dB 30 (dB 30 s - 1dB 28 1dB 28 r ), P 26 ), P 26 (dB (dB n 24 n 24 ie ai ai G 22 G 22 20 20 lif 1100 1125 1150 1175 1200 1225 1250 1275 1300 5 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6 6.1 6.2 6.3 6.4 6.5 p Idd (mA) Vdd (V) m GAIN P1dB Psat GAIN P1dB Psat A
PAE @ Psat vs. Temperature Power Dissipation @ 85C
30 12 25 ) 11 (W N 20 IO 10 ) % PAT 15 9 PAE( ISSI D 10 ER 8 W 5 PO 7 0 6 27 28 29 30 31 32 33 34 -8 -6 -4 -2 0 2 4 6 8 10 12 14 FREQUENCY (GHz) INPUT POWER (dBm) +25C +85C -55C 28GHz 31GHz 29GHz 32GHz 30GHz 33GHz For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
4
Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications P1dB vs. Supply Voltage P1dB vs. Temperature Input Return Loss vs. Temperature Gain vs. Temperature Absolute Maximum Ratings Outline Drawing Die Packaging Information Pad Descriptions Application Circuit Assembly Diagram
v02.0617
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz Psat vs. Idd Power Compression @ 30 GHz
38 36 2300 36 ) 30 2100 % 34 ip ) 24 1900 , PAE( m 32 B) I H (d dd (dB N at 18 1700 (m s 30 AI P A ) ), G 12 1500 28 Bm t(d u r - C 26 6 1300 Po e 24 0 1100 27 28 29 30 31 32 33 34 w -8 -6 -4 -2 0 2 4 6 8 10 12 FREQUENCY (GHz) INPUT POWER (dBm) o 1100mA 1200mA 1300mA Pout Gain PAE p Idd r &
Gain and Power vs. Idd @ 30 GHz Gain and Power vs. Vdd @ 30 GHz
A 40 40 e ) 38 m 38 m 36 (dB 36 (dB at s at lin 34 s 34 ), P ), P m 32 m 32 (dB 30 (dB 30 s - 1dB 28 1dB 28 r ), P 26 ), P 26 (dB (dB n 24 n 24 ie ai ai G 22 G 22 20 20 lif 1100 1125 1150 1175 1200 1225 1250 1275 1300 5 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6 6.1 6.2 6.3 6.4 6.5 p Idd (mA) Vdd (V) m GAIN P1dB Psat GAIN P1dB Psat A
PAE @ Psat vs. Temperature Power Dissipation @ 85C
30 12 25 ) 11 (W N 20 IO 10 ) % PAT 15 9 PAE( ISSI D 10 ER 8 W 5 PO 7 0 6 27 28 29 30 31 32 33 34 -8 -6 -4 -2 0 2 4 6 8 10 12 14 FREQUENCY (GHz) INPUT POWER (dBm) +25C +85C -55C 28GHz 31GHz 29GHz 32GHz 30GHz 33GHz For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
4
Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications P1dB vs. Supply Voltage P1dB vs. Temperature Input Return Loss vs. Temperature Gain vs. Temperature Absolute Maximum Ratings Outline Drawing Die Packaging Information Pad Descriptions Application Circuit Assembly Diagram