Datasheet HMC8205BF10 (Analog Devices) - 8

HMC8205BF10 Data Sheet 50 110 48 100 46 ) 44 90 (W N IO 42 T 80 Bm) d PA ( 40 AT ISSI S 70 P 38 D ER 0.3GHz W 36 0.4GHz 60 PO 0.5GHz 1.0GHz 34 2.0GHz 500mA 50 3.0GHz 32 4.0GHz 900mA 5.0GHz 1300mA 6.0GHz 30 40 0 1 2 3 4 5 6
100
10 15 20 25 30
016
FREQUENCY (GHz) INPUT POWER (dBm)
13790- 13790- Figure 21. PSAT vs. Frequency at Various Supply Currents; Input Power Figure 24. Power Dissipation vs. Input Power at Various Frequencies Set to 26 dBm
50 50 2000 48 45 1925 46 40 %) 1850 ( 44 AE 35 1775 , P 42 B) 30 1700 Bm) d d ( 40 N ( 25 mA) 1625 AI ( AT SP 38 , G I DD 20 1550 28V Bm) 36 40V d ( 15 1475 45V UT 34 50V O 10 P P OUT 1400 55V GAIN 32 5 PAE 1325 IDD 30 0 1250 0 1 2 3 4 5 6
036 037
10 12 14 16 18 20 22 24 26 28 FREQUENCY (GHz)
13790-
INPUT POWER (dBm)
13790- Figure 22. PSAT vs. Frequency at Various Supply Voltages; Input Power Figure 25. Output Power (POUT), Gain, PAE, and Total Supply Current (IDD) with RF Set to 26 dBm Power Applied vs. Input Power at 1 GHz
24 50 3000 45 2800 22 40 2600 %) ( 20 AE 35 2400 B) d , P N ( 18 B) 30 2200 d AI N ( 25 2000 mA) R G AI ( E 16 I DD W , G 20 1800 O P +85°C Bm) 14 +25°C d ( 15 1600 –40°C UT O 10 POUT 1400 P 12 GAIN 5 PAE 1200 IDD 10 0 1000 0 1 2 3 4 5 6
040 018
10 12 14 16 18 20 22 24 26 28 30 FREQUENCY (GHz)
13790-
INPUT POWER (dBm)
13790- Figure 23. Power Gain vs. Frequency at Various Temperatures; Input Power Figure 26. P Set to 26 dBm OUT, Gain, PAE, and IDD vs. Input Power at 3 GHz Rev. C | Page 8 of 14 Document Outline Features Applications Functional Block Diagram General Description Revision History Specifications Electrical Specifications Absolute Maximum Ratings Thermal Resistance ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Theory of Operation Applications Information Application Circuit Evaluation PCB Outline Dimensions Ordering Guide