Datasheet HMC8205BCHIPS (Analog Devices) - 3
| Fabricante | Analog Devices |
| Descripción | 0.4 GHz to 6 GHz, 35 W, GaN, Power Amplifier |
| Páginas / Página | 19 / 3 — Data Sheet. HMC8205BCHIPS. SPECIFICATIONS ELECTRICAL SPECIFICATIONS. … |
| Revisión | A |
| Formato / tamaño de archivo | PDF / 318 Kb |
| Idioma del documento | Inglés |
Data Sheet. HMC8205BCHIPS. SPECIFICATIONS ELECTRICAL SPECIFICATIONS. Table 1. Parameter. Min. Typ. Max. Unit. Table 2. Parameter
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Data Sheet HMC8205BCHIPS SPECIFICATIONS ELECTRICAL SPECIFICATIONS
TA = 25°C, supply voltage (VDD) = 50 V, total supply current (IDQ) = 1300 mA, and frequency range = 0.4 GHz to 0.8 GHz, unless otherwise noted.
Table 1. Parameter Min Typ Max Unit
FREQUENCY RANGE 0.4 0.8 GHz GAIN Small Signal Gain 24 dB Gain Flatness ±0.5 dB RETURN LOSS Input 6 dB Output 6.5 dB POWER Output (POUT) Input Power (PIN) = 24 dBm 43 dBm PIN = 28 dBm 46 dBm Gain PIN = 24 dBm 19 dB PIN = 28 dBm 17 dB POWER ADDED EFFICIENCY (PAE) PIN = 24 dBm 35 % PIN = 28 dBm 40 % TOTAL SUPPLY CURRENT (IDQ) 1300 mA SUPPLY VOLTAGE (VDD) 28 50 55 V TA = 25°C, VDD = 50 V, IDQ = 1300 mA, and frequency range = 0.8 GHz to 4 GHz, unless otherwise noted.
Table 2. Parameter Min Typ Max Unit
FREQUENCY RANGE 0.8 4 GHz GAIN Small Signal Gain 23 25 dB Gain Flatness ±0.8 dB RETURN LOSS Input 11 dB Output 10 dB POWER Output (POUT) Input Power (PIN) = 24 dBm 43 45.5 dBm PIN = 28 dBm 46.5 dBm Gain PIN = 24 dBm 22 dB PIN = 28 dBm 19 dB POWER ADDED EFFICIENCY (PAE) PIN = 24 dBm 35 % PIN = 28 dBm 40 % TOTAL SUPPLY CURRENT (IDQ) 1300 mA SUPPLY VOLTAGE (VDD) 28 50 55 V Rev. A | Page 3 of 19 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTION INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION RECOMMENDED BIAS SEQUENCING MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS Handling Precautions TYPICAL APPLICATION CIRCUIT ASSEMBLY DIAGRAM OUTLINE DIMENSIONS ORDERING GUIDE
TA = 25°C, supply voltage (VDD) = 50 V, total supply current (IDQ) = 1300 mA, and frequency range = 0.4 GHz to 0.8 GHz, unless otherwise noted.
Table 1. Parameter Min Typ Max Unit
FREQUENCY RANGE 0.4 0.8 GHz GAIN Small Signal Gain 24 dB Gain Flatness ±0.5 dB RETURN LOSS Input 6 dB Output 6.5 dB POWER Output (POUT) Input Power (PIN) = 24 dBm 43 dBm PIN = 28 dBm 46 dBm Gain PIN = 24 dBm 19 dB PIN = 28 dBm 17 dB POWER ADDED EFFICIENCY (PAE) PIN = 24 dBm 35 % PIN = 28 dBm 40 % TOTAL SUPPLY CURRENT (IDQ) 1300 mA SUPPLY VOLTAGE (VDD) 28 50 55 V TA = 25°C, VDD = 50 V, IDQ = 1300 mA, and frequency range = 0.8 GHz to 4 GHz, unless otherwise noted.
Table 2. Parameter Min Typ Max Unit
FREQUENCY RANGE 0.8 4 GHz GAIN Small Signal Gain 23 25 dB Gain Flatness ±0.8 dB RETURN LOSS Input 11 dB Output 10 dB POWER Output (POUT) Input Power (PIN) = 24 dBm 43 45.5 dBm PIN = 28 dBm 46.5 dBm Gain PIN = 24 dBm 22 dB PIN = 28 dBm 19 dB POWER ADDED EFFICIENCY (PAE) PIN = 24 dBm 35 % PIN = 28 dBm 40 % TOTAL SUPPLY CURRENT (IDQ) 1300 mA SUPPLY VOLTAGE (VDD) 28 50 55 V Rev. A | Page 3 of 19 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTION INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION RECOMMENDED BIAS SEQUENCING MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS Handling Precautions TYPICAL APPLICATION CIRCUIT ASSEMBLY DIAGRAM OUTLINE DIMENSIONS ORDERING GUIDE