Datasheet ADMV7810 (Analog Devices) - 10 Fabricante Analog Devices Descripción 81 GHz to 86 GHz, 1 W E-Band Power Amplifier with Power Detector Páginas / Página 18 / 10 — ADMV7810. Data Sheet. 1200. GAIN. P1dB. OUT. SAT. PAE. 1100. IDD. P SAT. … Revisión A Formato / tamaño de archivo PDF / 435 Kb Idioma del documento Inglés
ADMV7810. Data Sheet. 1200. GAIN. P1dB. OUT. SAT. PAE. 1100. IDD. P SAT. ( E. 1000. ), P. d (. 900. I DD. 800. ), OU. 700. IN GA. 600. 500. –15 –13 –11 –9
Descargar PDF
Línea de modelo para esta hoja de datos Versión de texto del documento ADMV7810 Data Sheet 40 30 1200 ) GAIN m P P1dB OUT GAIN dB P ( 35 SAT PAE ) 25 1100 % IDD P SAT ( E ), A m 30 20 1000 B ), P d ( m ) B dB A 1d 25 ( 15 m 900 P T ( T OU U I DD P ), P T 20 dB 10 800 ( ), OU IN B A d ( G 15 5 700 IN GA 10 0 600 0500 600 700 800 900 027–15 –13 –11 –9 –7 –5 –3 –1 1 3 5 7 9 11 -03 9- 9DRAIN CURRENT (mA) 40 40 16INPUT POWER (dBm) 16 Figure 27. Gain, Output P1dB, and PSAT vs. IDD, RF = 86 GHz Figure 30. Gain, POUT, PAE, and IDD vs. Input Power, RF = 86 GHz, IDD = 700 mA30 1200 30 1200 POUT POUT GAIN GAIN PAE PAE ) 25 1100 ) 25 1100 % IDD % IDD ( ( E E A A 20 1000 20 1000 ), P ), P m ) m ) dB A dB A ( m ( m T 15 900 ( T 15 900 ( OU I DD OU I DD ), P ), P dB 10 800 dB 10 800 ( ( IN IN A A G G 5 700 5 700 0 600 80 600 1–15 –13 –11 –9 –7 –5 –3 –1 1 3 5 7 9 11 -02–15 –13 –11 –9 –7 –5 –3 –1 1 3 5 7 9 11 -03 9 9INPUT POWER (dBm) 40 40 16INPUT POWER (dBm) 16 Figure 28. Gain, POUT, PAE, and IDD vs. Input Power, RF = 81 GHz, IDD = 700 mA Figure 31. Gain, POUT, PAE, and IDD vs. Input Power, RF = 81 GHz, IDD = 800 mA30 1200 30 1200 POUT POUT GAIN GAIN PAE PAE ) 25 1100 ) 25 1100 % IDD % IDD ( ( E E A A 20 1000 20 1000 ), P ), P m ) m ) dB A dB A ( m ( m T 15 900 ( T 15 900 ( OU I DD OU I DD ), P ), P dB 10 800 dB 10 800 ( ( IN IN A A G G 5 700 5 700 0 600 90 600 2–15 –13 –11 –9 –7 –5 –3 –1 1 3 5 7 9 11 -02–15 –13 –11 –9 –7 –5 –3 –1 1 3 5 7 9 11 -03 9 9INPUT POWER (dBm) 40 40 16INPUT POWER (dBm) 16 Figure 29. Gain, POUT, PAE, and IDD vs. Input Power, RF = 83.5 GHz, IDD = 700 mA Figure 32. Gain, POUT, PAE, and IDD vs. Input Power, RF = 83.5 GHz, IDD = 800 mA Rev. A | Page 10 of 18 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION ASSEMBLY DIAGRAM MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling MOUNTING Eutectic Die Attach Epoxy Die Attach WIRE BONDING OUTLINE DIMENSIONS ORDERING GUIDE