Datasheet HMC998A (Analog Devices) - 6

HMC998A
v03.0918
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, DC - 22 GHz Power Compression @ 22 GHz PAE @ Psat vs. Frequency
40 800 30 35 750 25 30 700 IP 20 25 650 H Idd (mA) 20 600 15 PAE (%) 15 550 10 10 500 R - C 5 Pout(dBm), GAIN(dB), PAE(%) 5 450 E 0 400 0 W 0 4 8 12 16 20 24 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) O INPUT POWER (dBm) Pout Gain PAE +25C +85C -55C Idd R & P
Power Dissipation @ 85C Gain & Power vs. Vdd @ 2 GHz
A E 9 35 8.5 IN 30 8 7.5 25 7 S - L 6.5 20 R 6 IE POWER DISSIPATION (W) 15 5.5 Gain (dB), P1dB (dBm), Psat (dBm) 5 10 LIF 0 4 8 12 16 20 24 11 12 13 14 15 P INPUT POWER (dBm) Vdd (V) M 2GHz 12GHz 22GHz 4GHz 16GHz GAIN P1dB Psat A 8GHz 20GHz
Gain & Power vs. Vdd @ 10 GHz Gain & Power vs. Vdd @ 22 GHz
35 35 30 30 25 25 20 20 15 15 Gain (dB), P1dB (dBm), Psat (dBm) Gain (dB), P1dB (dBm), Psat (dBm) 10 10 11 12 13 14 15 11 12 13 14 15 Vdd (V) Vdd (V) GAIN P1dB Psat GAIN P1dB Psat For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
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Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Performance Characteristics Gain & Return Loss Gain vs. Temperature Input Return Loss vs. Temperature Output Return Loss vs. Temperature Noise Figure vs. Temperature P1dB vs. Temperature Output IP3 vs. Temperature @ Pout = 16 dBm / Tone Reverse Isolation vs. Temperature Second Harmonics vs. Temperature @ Pout = 14 dBm, Vdd = 10V & Vgg = 3.5V, 175 mA Second Harmonics vs. Vdd @ Pout = 14 dBm, Idd = 175 mA Absolute Maximum Ratings Pad Descriptions Assembly Diagram Application Circuit Mounting & Bonding Techniques for Millimeterwave GaAs MMICs