Datasheet HMC373LP3, 373LP3E (Analog Devices)

HMC373LP3 / 373LP3E
v04.1119
GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz Typical Applications Features
The HMC373LP3 / HMC373LP3E is ideal for Noise Figure: 0.9 dB T basestation receivers: Output IP3: +35 dBm M • GSM, GPRS & EDGE Gain: 14 dB S - • CDMA & W-CDMA Low Loss LNA Bypass Path E • Private Land Mobile Radio Single Supply: +5V @ 90 mA IS 50 Ohm Matched Output O N
Functional Diagram General Description
W The HMC373LP3 / HMC373LP3E are versatile, high dynamic range GaAs MMIC Low Noise Amplifiers LO - that integrates a low loss LNA bypass mode on the S IC. The amplifier is ideal for GSM & CDMA cel ular R basestation front-end receivers operating between 700 and 1000 MHz and provides 0.9 dB noise figure, IE 14 dB of gain and +35 dBm IP3 from a single supply of +5V @ 90 mA. Input and output return losses are 28 LIF P and 12 dB respectively with the LNA requiring minimal external components to optimize the RF input match, M A RF ground and DC bias. By presenting an open or short circuit to a single control line, the LNA can be switched into a low 2.0 dB loss bypass mode reducing the current consumption to 10 µA. For applications which require improved noise figure, please see the HMC668LP3(E).
Electrical Specifications, T = +25° C, Vdd = +5V A
LNA Mode LNA Mode Bypass Mode Parameter Units Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Frequency Range 810 - 960 700 - 1000 700 - 1000 MHz Gain 11.5 13.5 10.5 14 -2.8 -2.0 dB Gain Variation Over Temperature 0.008 0.015 0.008 0.015 0.002 0.004 dB / °C Noise Figure 0.9 1.3 1.0 1.4 dB Input Return Loss 28 25 30 dB Output Return Loss 12 11 25 dB Reverse Isolation 20 19 dB Power for 1dB Compression (P1dB)* 18 21 17 20 30 dBm Saturated Output Power (Psat) 22.5 22 dBm Third Order Intercept (IP3)* 35.5 35 50 dBm (-20 dBm Input Power per tone, 1 MHz tone spacing) Supply Current (Idd) 90 90 0.01 mA * P1dB and IP3 for LNA Mode are referenced to RFOUT while P1dB and IP3 for Bypass Mode are referenced to RFIN. I F nf o or r p mati roic n e fu , d rnis e h leiv d e b ry y , a Analn o d t g D o p evic leac s i e o s bel rid ev e e rs d t : A o b n e a a lco c g D urat e e a v n ic d re elsi, I abl n e c . H , O owe n vee T r, n e o chn F o o lo r p g ri y W ce a , d y el, P ive.O ry . B , anox 9 d t 10 o pl 6 a , N c o e orrw de o r o s d, M : Anal A 0 o 2 g D 0 e 6 vi 2 c - e 9 s 10 , I 6 nc., responsibility is assumed by Analog Devices for it P s u h se on , no er f: 78 or an 1- y i 3 nfr2in9g-e4 m 7 e 0 nt 0 • O s of paterd nt e s or o r ot n h leir rights of third parties that may result from its use. Specifications subject to change without notice. No ne a O t w n w e Te w ch.a n n ol a o lgog. y Wcao y m , P.O. Box 9106, Norwood, MA 02062-9106
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