Datasheet HMC375LP3, 375LP3E (Analog Devices)
| Fabricante | Analog Devices |
| Descripción | GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz |
| Páginas / Página | 6 / 1 — HMC375LP3 / 375LP3E. GaAs PHEMT MMIC LOW NOISE. AMPLIFIER, 1.7 - 2.2 GHz. … |
| Formato / tamaño de archivo | PDF / 333 Kb |
| Idioma del documento | Inglés |
HMC375LP3 / 375LP3E. GaAs PHEMT MMIC LOW NOISE. AMPLIFIER, 1.7 - 2.2 GHz. Typical Applications. Features. Functional Diagram
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HMC375LP3 / 375LP3E
v03.0610
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
7
Typical Applications Features
T The HMC375LP3 / HMC375LP3E is ideal for Noise Figure: 0.9 dB basestation receivers: Output IP3: +34 dBm • GSM, GPRS & EDGE Gain: 17 dB • CDMA & W-CDMA Very Stable Gain vs. Supply & Temperature E - SM • DECT Single Supply: +5V @ 136 mA IS 50 Ohm Matched Output
Functional Diagram General Description
W NO The HMC375LP3 & HMC375LP3E high dynamic O range GaAs PHEMT MMIC Low Noise Amplifi ers are ideal for GSM & CDMA cellular basestation front-end - L receivers operating between 1.7 and 2.2 GHz. This S R LNA has been optimized to provide 0.9 dB noise fi gure, 17 dB gain and +33 dBm output IP3 from IE a single supply of +5V @ 136mA. Input and output IF return losses are 14 dB typical with the LNA requiring L minimal external components to optimize the RF input P match, RF ground and DC bias. For applications M which require improved noise fi gure, please see the A HMC618LP3(E).
Electrical Specifi cations, T = +25° C, Vs = +5V A
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range 1.8 - 1.9 1.9 - 2.0 2.0 - 2.1 2.1 - 2.2 GHz Gain 16.5 18.5 15.5 17.5 15 17 13 15 dB Gain Variation Over Temperature 0.014 0.021 0.014 0.021 0.014 0.021 0.014 0.021 dB/°C Noise Figure 1.0 1.35 0.95 1.2 0.9 1.2 0.9 1.3 dB Input Return Loss 12 13 14 15 dB Output Return Loss 13 16 11 8 dB Reverse Isolation 35 34 34 34 dB Output Power for 16 18.5 16 18.5 15 18 14.5 17.5 dBm 1dB Compression (P1dB) Saturated Output Power (Psat) 19.5 19.5 19.5 19.5 dBm Output Third Order Intercept (IP3) (-20 dBm Input Power per tone, 34 33.5 33 32.5 dBm 1 MHz tone spacing) Supply Current (Idd) 136 136 136 136 mA Info F rmoatr pr ion f iurcne, de ished b ly iv A e n r al y o a g D n evd to p ices is bla eli c eve o ed t rde o be ras: H ccuratite tiatne M d reli iacr ble ow . Ho av wev e C er, n o o rpo Fora r t p iro ic n e ,, 2 d 0 eli A ve lrpha R y, and toad, C o place hoel rd m er s s fo : Ard, MA 01 nalog Devic 8 e 2 s 4 , Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rde hone r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .ehit r o t nilte in .c e ao t m
7 - 74
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 o plica r app tion Su s p @ po h rt itt : P ite ho .c ne o : 1m -800-ANALOG-D
v03.0610
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
7
Typical Applications Features
T The HMC375LP3 / HMC375LP3E is ideal for Noise Figure: 0.9 dB basestation receivers: Output IP3: +34 dBm • GSM, GPRS & EDGE Gain: 17 dB • CDMA & W-CDMA Very Stable Gain vs. Supply & Temperature E - SM • DECT Single Supply: +5V @ 136 mA IS 50 Ohm Matched Output
Functional Diagram General Description
W NO The HMC375LP3 & HMC375LP3E high dynamic O range GaAs PHEMT MMIC Low Noise Amplifi ers are ideal for GSM & CDMA cellular basestation front-end - L receivers operating between 1.7 and 2.2 GHz. This S R LNA has been optimized to provide 0.9 dB noise fi gure, 17 dB gain and +33 dBm output IP3 from IE a single supply of +5V @ 136mA. Input and output IF return losses are 14 dB typical with the LNA requiring L minimal external components to optimize the RF input P match, RF ground and DC bias. For applications M which require improved noise fi gure, please see the A HMC618LP3(E).
Electrical Specifi cations, T = +25° C, Vs = +5V A
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range 1.8 - 1.9 1.9 - 2.0 2.0 - 2.1 2.1 - 2.2 GHz Gain 16.5 18.5 15.5 17.5 15 17 13 15 dB Gain Variation Over Temperature 0.014 0.021 0.014 0.021 0.014 0.021 0.014 0.021 dB/°C Noise Figure 1.0 1.35 0.95 1.2 0.9 1.2 0.9 1.3 dB Input Return Loss 12 13 14 15 dB Output Return Loss 13 16 11 8 dB Reverse Isolation 35 34 34 34 dB Output Power for 16 18.5 16 18.5 15 18 14.5 17.5 dBm 1dB Compression (P1dB) Saturated Output Power (Psat) 19.5 19.5 19.5 19.5 dBm Output Third Order Intercept (IP3) (-20 dBm Input Power per tone, 34 33.5 33 32.5 dBm 1 MHz tone spacing) Supply Current (Idd) 136 136 136 136 mA Info F rmoatr pr ion f iurcne, de ished b ly iv A e n r al y o a g D n evd to p ices is bla eli c eve o ed t rde o be ras: H ccuratite tiatne M d reli iacr ble ow . Ho av wev e C er, n o o rpo Fora r t p iro ic n e ,, 2 d 0 eli A ve lrpha R y, and toad, C o place hoel rd m er s s fo : Ard, MA 01 nalog Devic 8 e 2 s 4 , Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rde hone r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .ehit r o t nilte in .c e ao t m
7 - 74
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 o plica r app tion Su s p @ po h rt itt : P ite ho .c ne o : 1m -800-ANALOG-D