Datasheet HMC462LP5, 462LP5E (Analog Devices)
| Fabricante | Analog Devices |
| Descripción | GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz |
| Páginas / Página | 6 / 1 — HMC462LP5 / 462LP5E. GaAs pHEMT MMIC. LOW NOISE AMPLIFIER, 2 - 20 GHz. … |
| Formato / tamaño de archivo | PDF / 378 Kb |
| Idioma del documento | Inglés |
HMC462LP5 / 462LP5E. GaAs pHEMT MMIC. LOW NOISE AMPLIFIER, 2 - 20 GHz. Typical Applications. Features. Functional Diagram
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HMC462LP5 / 462LP5E
v05.0213
GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz Typical Applications Features
The HMC462LP5 / HMC462LP5E Wideband LNA is Noise Figure: 2.5 dB @ 10 GHz T ideal for: Gain: 13 dB M • Telecom Infrastructure P1dB Output Power: +14.5 dBm @ 10 GHz • Microwave Radio & VSAT Self-Biased: +5V @ 66mA E - S • Military EW, ECM & C3I 50 Ohm Matched Input/Output IS • Test Instrumentation 25 mm2 Leadless SMT Package O • Fiber Optics
Functional Diagram General Description
W N The HMC462LP5 & HMC462LP5E are GaAs MMIC O pHEMT Low Noise Distributed Amplifiers in leadless 5x5 mm surface mount packages which operate S - L between 2 and 20 GHz. The self-biased amplifier R provides 13 dB of gain, 2.5 to 3.5 dB noise figure and +14.5 dBm of output power at 1 dB gain compression IE while requiring only 66 mA from a single +5V supply. Gain flatness is excel ent from 6 - 18 GHz making LIF P the HMC462LP5 & HMC462LP5E ideal for EW, ECM RADAR and test equipment applications. The M wideband amplifier I/Os are internal y matched to 50 A Ohms and are internal y DC blocked.
Electrical Specifications, T = +25° C, Vdd= 5V A
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range 2 - 6 6 - 14 14 - 20 GHz Gain 12 14 11 13 10 12 dB Gain Flatness ±0.5 ±0.5 ±0.5 dB Gain Variation Over Temperature 0.015 0.025 0.02 0.03 0.03 0.04 dB/ °C Noise Figure 3.0 4.0 2.5 4.0 4.0 6.0 dB Input Return Loss 15 13 11 dB Output Return Loss 12 12 8 dB Output Power for 1 dB Compression (P1dB) 12 15 11 14 9 12 dBm Saturated Output Power (Psat) 17 16 15 dBm Output Third Order Intercept (IP3) 26 25 22 dBm Supply Current 41 66 84 41 66 84 41 66 84 mA (Idd) (Vdd= 5V) Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd hone e r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o t niltie n .c e ao t m
1
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 p o lica rti a o p n S p u s p @ po h rt itt : P ite ho . n c e om : 1-800-ANALOG-D
v05.0213
GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz Typical Applications Features
The HMC462LP5 / HMC462LP5E Wideband LNA is Noise Figure: 2.5 dB @ 10 GHz T ideal for: Gain: 13 dB M • Telecom Infrastructure P1dB Output Power: +14.5 dBm @ 10 GHz • Microwave Radio & VSAT Self-Biased: +5V @ 66mA E - S • Military EW, ECM & C3I 50 Ohm Matched Input/Output IS • Test Instrumentation 25 mm2 Leadless SMT Package O • Fiber Optics
Functional Diagram General Description
W N The HMC462LP5 & HMC462LP5E are GaAs MMIC O pHEMT Low Noise Distributed Amplifiers in leadless 5x5 mm surface mount packages which operate S - L between 2 and 20 GHz. The self-biased amplifier R provides 13 dB of gain, 2.5 to 3.5 dB noise figure and +14.5 dBm of output power at 1 dB gain compression IE while requiring only 66 mA from a single +5V supply. Gain flatness is excel ent from 6 - 18 GHz making LIF P the HMC462LP5 & HMC462LP5E ideal for EW, ECM RADAR and test equipment applications. The M wideband amplifier I/Os are internal y matched to 50 A Ohms and are internal y DC blocked.
Electrical Specifications, T = +25° C, Vdd= 5V A
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range 2 - 6 6 - 14 14 - 20 GHz Gain 12 14 11 13 10 12 dB Gain Flatness ±0.5 ±0.5 ±0.5 dB Gain Variation Over Temperature 0.015 0.025 0.02 0.03 0.03 0.04 dB/ °C Noise Figure 3.0 4.0 2.5 4.0 4.0 6.0 dB Input Return Loss 15 13 11 dB Output Return Loss 12 12 8 dB Output Power for 1 dB Compression (P1dB) 12 15 11 14 9 12 dBm Saturated Output Power (Psat) 17 16 15 dBm Output Third Order Intercept (IP3) 26 25 22 dBm Supply Current 41 66 84 41 66 84 41 66 84 mA (Idd) (Vdd= 5V) Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd hone e r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o t niltie n .c e ao t m
1
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 p o lica rti a o p n S p u s p @ po h rt itt : P ite ho . n c e om : 1-800-ANALOG-D